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PMBD6050 Dataheets PDF



Part Number PMBD6050
Manufacturers NXP
Logo NXP
Description High-speed diode
Datasheet PMBD6050 DatasheetPMBD6050 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 PMBD6050 High-speed diode Product data sheet Supersedes data of 1999 May 11 2004 Jan 14 NXP Semiconductors High-speed diode Product data sheet PMBD6050 FEATURES • Small plastic SMD package • High switching speed: max. 4 ns • Continuous reverse voltage: max. 70 V • Repetitive peak reverse voltage: max. 85 V • Repetitive peak forward current: max. 500 mA. PINNING PIN 1 2 3 DESCRIPTION anode not connected cathode APPLICATIONS • High-.

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DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 PMBD6050 High-speed diode Product data sheet Supersedes data of 1999 May 11 2004 Jan 14 NXP Semiconductors High-speed diode Product data sheet PMBD6050 FEATURES • Small plastic SMD package • High switching speed: max. 4 ns • Continuous reverse voltage: max. 70 V • Repetitive peak reverse voltage: max. 85 V • Repetitive peak forward current: max. 500 mA. PINNING PIN 1 2 3 DESCRIPTION anode not connected cathode APPLICATIONS • High-speed switching in thick and thin-film circuits. DESCRIPTION The PMBD6050 is a high-speed switching diode fabricated in planar technology, and encapsulated in a small SOT23 plastic SMD package. MARKING TYPE NUMBER PMBD6050 MARKING CODE(1) *5A Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W : Made in China. handbook, halfpa2ge 1 2 n.c. 3 1 3 MAM185 Fig.1 Simplified outline (SOT23) and symbol. ORDERING INFORMATION TYPE NUMBER PMBD6050 NAME − PACKAGE DESCRIPTION plastic surface mounted package; 3 leads VERSION SOT23 2004 Jan 14 2 NXP Semiconductors High-speed diode Product data sheet PMBD6050 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current Ptot total power dissipation Tstg storage temperature Tj junction temperature CONDITIONS note 1; see Fig.2 square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 1 ms t=1s Tamb = 25 °C; note 1 Note 1. Device mounted on an FR4 printed-circuit board. MIN. − − − − MAX. 85 70 215 500 UNIT V V mA mA −4A −1A − 0.5 A − 250 mW −65 +150 °C − 150 °C 2004 Jan 14 3 NXP Semiconductors High-speed diode Product data sheet PMBD6050 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER VF forward voltage IR reverse current Cd diode capacitance trr reverse recovery time Vfr forward recovery voltage CONDITIONS MAX. see Fig.3 IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA see Fig.5 715 855 1 1.25 VR = 50 V VR = 50 V; Tj = 150 °C f = 1 MHz; VR = 0; see Fig.6 when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 when switched from IF = 10 mA; tr = 20 ns; see Fig.8 100 50 1.5 4 1.75 UNIT mV mV V V nA µA pF ns V THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-tp) Rth(j-a) thermal resistance from junction to tie-point thermal resistance from junction to ambient Note 1. Device mounted on an FR4 printed-circuit board. CONDITIONS note 1 VALUE 330 500 UNIT K/W K/W 2004 Jan 14 4 NXP Semiconductors High-speed diode GRAPHICAL DATA 250 IF (mA) 200 MSA562 -1 150 100 50 0 0 50 100 150 200 Tamb (oC) Device mounted on an FR4 printed-circuit board. Fig.2 Maximum permissible continuous forward current as a function of ambient temperature. Product data sheet PMBD6050 300 handbook, halfpa.


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