Document
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D088
PMBD6050 High-speed diode
Product data sheet Supersedes data of 1999 May 11
2004 Jan 14
NXP Semiconductors
High-speed diode
Product data sheet
PMBD6050
FEATURES
• Small plastic SMD package • High switching speed: max. 4 ns • Continuous reverse voltage: max. 70 V • Repetitive peak reverse voltage: max. 85 V • Repetitive peak forward current: max. 500 mA.
PINNING
PIN 1 2 3
DESCRIPTION anode not connected cathode
APPLICATIONS • High-speed switching in thick and thin-film circuits.
DESCRIPTION
The PMBD6050 is a high-speed switching diode fabricated in planar technology, and encapsulated in a small SOT23 plastic SMD package.
MARKING
TYPE NUMBER PMBD6050
MARKING CODE(1) *5A
Note
1. * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W : Made in China.
handbook, halfpa2ge
1
2 n.c.
3
1 3
MAM185
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
TYPE NUMBER
PMBD6050
NAME −
PACKAGE DESCRIPTION plastic surface mounted package; 3 leads
VERSION SOT23
2004 Jan 14
2
NXP Semiconductors
High-speed diode
Product data sheet
PMBD6050
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VRRM VR IF IFRM IFSM
PARAMETER
repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current
Ptot total power dissipation Tstg storage temperature Tj junction temperature
CONDITIONS
note 1; see Fig.2
square wave; Tj = 25 °C prior to surge; see Fig.4
t = 1 µs t = 1 ms t=1s Tamb = 25 °C; note 1
Note 1. Device mounted on an FR4 printed-circuit board.
MIN. − − − −
MAX. 85 70 215 500
UNIT V V mA mA
−4A −1A − 0.5 A − 250 mW −65 +150 °C − 150 °C
2004 Jan 14
3
NXP Semiconductors
High-speed diode
Product data sheet
PMBD6050
ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF forward voltage
IR reverse current
Cd diode capacitance trr reverse recovery time
Vfr forward recovery voltage
CONDITIONS
MAX.
see Fig.3
IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA see Fig.5
715 855 1 1.25
VR = 50 V
VR = 50 V; Tj = 150 °C
f = 1 MHz; VR = 0; see Fig.6
when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7
when switched from IF = 10 mA; tr = 20 ns; see Fig.8
100 50 1.5 4
1.75
UNIT
mV mV V V
nA µA pF ns
V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-tp) Rth(j-a)
thermal resistance from junction to tie-point thermal resistance from junction to ambient
Note
1. Device mounted on an FR4 printed-circuit board.
CONDITIONS note 1
VALUE 330 500
UNIT K/W K/W
2004 Jan 14
4
NXP Semiconductors
High-speed diode
GRAPHICAL DATA
250
IF (mA)
200
MSA562 -1
150
100
50
0 0 50 100 150 200 Tamb (oC)
Device mounted on an FR4 printed-circuit board.
Fig.2 Maximum permissible continuous forward current as a function of ambient temperature.
Product data sheet
PMBD6050
300
handbook, halfpa.