BYV32G-200

I2PAK BYV32G-200 Dual ultrafast power diode Rev. 01 — 11 January 2011 Product data sheet 1. Product profile 1.1 General description Dual ultrafast power diode in a SOT226A (I2PAK) low-profile plastic package. 1.2 Features and benefits „ High reverse voltage surge capability „ High thermal cycling performance „ Low thermal resistance „ Soft recovery characteristic minimizes power consuming oscillations „ Very low on-state loss 1.3 Applications „ Output rectifiers in high-frequency switched-mode power supplies 1.4 Quick reference data Table 1. Symbol VRRM IO(AV) Quick reference data Parameter repetitive peak reverse voltage average output current IFSM non-repetitive peak forward current IRRM repetitive peak reverse current VESD electrostatic discharge voltage Static characteristics VF forward voltage Conditions square-wave pulse; δ = 0.5 ; Tmb ≤ 115 °C; both diodes conducting; see Figure 1; see Figure 2 Tj(init) = 25 °C; tp = 10 ms; sine-wave pulse; per diode tp = 2 µs; δ = 0.001 HBM; C = 250 pF; R = 1.5 kΩ; all pins IF = 8 A; Tj = 150 °C; see Figure 4 Min Typ Max Unit - - 200 V - - 20 A - - 125 A - - 0.2 A - - 8 kV - 0.72 0.85 V NXP Semiconductors BYV32G-200 Dual ultrafast power diode Table 1. Quick reference data …continued Symbol Parameter Conditions Dynamic characteristics trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs; Tj = 25 °C; ramp recovery; see Figure 5 IR = 1 A; IF = 0.5 A; Tj = 25 °C; step recovery; measured at reverse cu...