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WFP85N06 Dataheets PDF



Part Number WFP85N06
Manufacturers Wisdom technologies
Logo Wisdom technologies
Description N-Channel MOSFET
Datasheet WFP85N06 DatasheetWFP85N06 Datasheet (PDF)

Wisdom Semiconductor WFP85N06 N-Channel MOSFET Features ■ RDS(on) (Max 0.013 Ω )@VGS=10V ■ Gate Charge (Typical 70nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (175°C) General Description This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suite.

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Wisdom Semiconductor WFP85N06 N-Channel MOSFET Features ■ RDS(on) (Max 0.013 Ω )@VGS=10V ■ Gate Charge (Typical 70nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (175°C) General Description This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. Symbol 1. Gate{ { 2. Drain ● ◀▲ ● ● { 3. Source TO-220 123 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Parameter Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case to Sink Thermal Resistance, Junction-to-Ambient Min. - (Note 1) (Note 2) (Note 1) (Note 3) Value 60 85 60 340 ±20 929 17.6 7.0 176 1.17 - 55 ~ 175 300 Value Typ. 0.5 - Max. 0.85 62.5 Units V A A A V mJ mJ V/ns W W/°C °C °C Units °C/W °C/W °C/W Copyright@Wisdom Semiconductor Inc., All rights reserved. WFP85N06 Electrical Characteristics ( TC = 25 °C unless otherwise noted ) Symbol Parameter Off Characteristics BVDSS Drain-Source Breakdown Voltage Δ BVDSS/ Breakdown Voltage Temperature Δ TJ coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage, Forward Gate-source Leakage, Reverse On Characteristics VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-state Resistance Dynamic Characteristics Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Dynamic Characteristics td(on) tr td(off) tf Qg Qgs Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Qgd Gate-Drain Charge(Miller Charge) Test Conditions VGS = 0V, ID = 250uA ID = 250uA, referenced to 25 °C VDS = 60V, VGS = 0V VDS = 48V, TC = 125 °C VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VDS = VGS, ID = 250uA VGS =10 V, ID = 42.5A VGS =0 V, VDS =25V, f = 1MHz VDD =30V, ID =42.5A, RG =25Ω (Note 4, 5) VDS =48V, VGS =10V, ID =85A (Note 4, 5) Min 60 - 2.0 - - - Typ Max Units - 0.07 - - - 10 100 100 -100 V V/°C uA uA nA nA - 4.0 10.5 13 V mΩ 2500 900 160 - 40 200 150 150 70 20 - 30 - pF ns nC Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Parameter Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Test Conditions Integral Reverse p-n Junction Diode in the MOSFET IS =85A, VGS =0V IS=85A, VGS=0V, dIF/dt=100A/us ※ NOTES 1. Repeativity rating : pulse width limited by junction temperature 2. L = 150uH, IAS =85A, VDD = 25V, RG = 25Ω , Starting TJ = 25°C 3. ISD ≤ 85A, di/dt ≤ 300A/us, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2% 5. Essentially independent of operating temperature. Min. - Typ. 70 130 Max. 85 340 1.5 - Unit. A V ns uC Copyright@Wisdom Semiconductor Inc., All rights reserved. Typical Characteristics ID, Drain Current [A] DS(ON)R [Ω], Drain-Source On-Resistance Top : 15.V0GVS 10.0 V 8.0 V 102 7.0 V 6.0 V 5.5 V 5.0 V Bottom: 4.5 V 101 100 10-1 ※Notes : 1. 250μs Pulse Test 2. TC = 25℃ 100 VDS, Drain-Source Voltage [V] 101 Figure 1. On-Region Characteristics 0.020 0.015 0.010 VGS = 10V VGS = 20V 0.005 0.000 0 ※ Note : TJ = 25℃ 50 100 150 200 250 300 350 ID, Drain Current [A] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 6000 4000 2000 Coss Ciss Crss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 0 10-1 100 101 VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics VGS, Gate-Source Voltage [V] IDR, Reverse Drain Current [A] ID, Drain Current [A] 102 101 175℃ 25℃ -55℃ ※Notes : 1. 2. V25DS0μ=s30PVulse Test 100 2 4 6 8 10 VGS, Gate-Source Voltage [V] Figure 2. Transfer Characteristics 102 101 100 0.2 175℃ 25℃ ※Notes : 1. 2. V25G0Sμ=s0VPulse Test 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-Drain voltage [V] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 12 10 VDS = 30V 8 VDS = 48V 6 4 2 ※ Note : ID = 85A 0 0 20 40 60 80 QG, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics Capacitance [pF] Typical Characteristics (Continued) (Normalized) Breakdown Voltage Drain-SBoVuDrScS,e 1.2 1.1 1.0 0.9 ※Notes: 1. 2. IVD.


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