Document
Wisdom Semiconductor
WFP85N06
N-Channel MOSFET
Features
■ RDS(on) (Max 0.013 Ω )@VGS=10V ■ Gate Charge (Typical 70nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (175°C)
General Description
This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Symbol 1. Gate{
{ 2. Drain
●
◀▲
● ●
{ 3. Source
TO-220
123
Absolute Maximum Ratings
Symbol VDSS
ID
IDM VGS EAS EAR dv/dt
PD
TSTG, TJ TL
Parameter Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.
Thermal Characteristics
Symbol
RθJC RθCS RθJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case to Sink Thermal Resistance, Junction-to-Ambient
Min. -
(Note 1)
(Note 2) (Note 1) (Note 3)
Value 60 85
60 340
±20
929 17.6 7.0 176 1.17 - 55 ~ 175
300
Value
Typ. 0.5 -
Max. 0.85
62.5
Units V A A A V mJ mJ
V/ns W
W/°C °C °C
Units
°C/W °C/W °C/W
Copyright@Wisdom Semiconductor Inc., All rights reserved.
WFP85N06
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Parameter
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
Δ BVDSS/ Breakdown Voltage Temperature Δ TJ coefficient
IDSS Drain-Source Leakage Current
IGSS
Gate-Source Leakage, Forward Gate-source Leakage, Reverse
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-state Resistance
Dynamic Characteristics
Ciss Input Capacitance
Coss Crss
Output Capacitance Reverse Transfer Capacitance
Dynamic Characteristics
td(on) tr
td(off) tf Qg
Qgs
Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge
Qgd Gate-Drain Charge(Miller Charge)
Test Conditions
VGS = 0V, ID = 250uA ID = 250uA, referenced to 25 °C VDS = 60V, VGS = 0V VDS = 48V, TC = 125 °C VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VDS = VGS, ID = 250uA VGS =10 V, ID = 42.5A
VGS =0 V, VDS =25V, f = 1MHz
VDD =30V, ID =42.5A, RG =25Ω (Note 4, 5)
VDS =48V, VGS =10V, ID =85A (Note 4, 5)
Min
60 -
2.0 -
-
-
Typ Max Units
-
0.07
-
-
-
10 100 100 -100
V
V/°C
uA uA nA nA
- 4.0
10.5
13
V mΩ
2500 900 160
-
40 200 150 150 70 20 -
30 -
pF ns nC
Source-Drain Diode Ratings and Characteristics
Symbol IS ISM VSD trr Qrr
Parameter Continuous Source Current
Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Test Conditions Integral Reverse p-n Junction Diode in the MOSFET IS =85A, VGS =0V
IS=85A, VGS=0V, dIF/dt=100A/us
※ NOTES 1. Repeativity rating : pulse width limited by junction temperature
2. L = 150uH, IAS =85A, VDD = 25V, RG = 25Ω , Starting TJ = 25°C
3. ISD ≤ 85A, di/dt ≤ 300A/us, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2% 5. Essentially independent of operating temperature.
Min. -
Typ. 70
130
Max. 85 340 1.5 -
Unit.
A V ns uC
Copyright@Wisdom Semiconductor Inc., All rights reserved.
Typical Characteristics
ID, Drain Current [A]
DS(ON)R [Ω], Drain-Source On-Resistance
Top : 15.V0GVS 10.0 V
8.0 V 102 7.0 V
6.0 V 5.5 V
5.0 V
Bottom: 4.5 V
101
100 10-1
※Notes : 1. 250μs Pulse Test 2. TC = 25℃
100
VDS, Drain-Source Voltage [V]
101
Figure 1. On-Region Characteristics
0.020
0.015 0.010
VGS = 10V VGS = 20V
0.005
0.000 0
※ Note : TJ = 25℃
50 100 150 200 250 300 350
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
6000 4000 2000
Coss Ciss
Crss
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
※ Notes : 1. VGS = 0 V 2. f = 1 MHz
0 10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
VGS, Gate-Source Voltage [V]
IDR, Reverse Drain Current [A]
ID, Drain Current [A]
102
101 175℃
25℃ -55℃
※Notes :
1. 2.
V25DS0μ=s30PVulse
Test
100 2 4 6 8 10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
102
101
100 0.2
175℃
25℃
※Notes :
1. 2.
V25G0Sμ=s0VPulse
Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
12
10 VDS = 30V 8 VDS = 48V
6
4
2 ※ Note : ID = 85A
0 0 20 40 60 80
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Capacitance [pF]
Typical Characteristics (Continued)
(Normalized) Breakdown Voltage
Drain-SBoVuDrScS,e
1.2
1.1
1.0
0.9 ※Notes:
1. 2.
IVD.