Document
PROVISIONAL
Wisdom Semiconductor
WFB33N25
N-Channel MOSFET
Features
■ RDS(on) (Max 0.094 Ω )@VGS=10V ■ Gate Charge (Typical 37nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C)
General Description
This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterruped power supply, motor control.
Symbol 1. Gate{
{ 2. Drain
●
◀▲
● ●
{ 3. Source
Absolute Maximum Ratings (* Drain current limited by junction temperature)
Symbol
VDSS
ID
IDM VGS EAS EAR dv/dt
PD
TSTG, TJ TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.
(Note 1)
(Note 2) (Note 1) (Note 3)
Value
250 33* 20.4* 132*
±30
918 23.5 4.5 235 1.89 - 55 ~ 150
300
Thermal Characteristics
Symbol
RθJC RθJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Min.
-
Value Typ.
-
Max.
0.53 62.5
Units
V A A A V mJ mJ V/ns W W/°C °C °C
Units
°C/W °C/W
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 μA
250 --
ΔBVDSS Breakdown Voltage Temperature / ΔTJ Coefficient
ID = 250 μA, Referenced to 25°C -- 0.25
IDSS Zero Gate Voltage Drain Current
VDS = 250 V, VGS = 0 V VDS = 200 V, TC = 125°C
-- --- --
IGSSF
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
-- --
IGSSR
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
-- --
--
--
10 100 100 -100
V
V/°C
μA μA nA nA
On Characteristics
VGS(th) Gate Threshold Voltage RDS(on) Static Drain-Source
On-Resistance
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = VGS, ID = 250 μA VGS = 10 V, ID = 16.5 A
(Note 4)
2.0 --
4.0
-- 0.077 0.094
V Ω
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
-- 1650 -- 330 -- 40
----
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 125V, ID = 33 A, RG = 25 Ω
VDS = 200 V, ID = 33A, VGS = 10 V
(Note 4, 5)
(Note 4, 5)
--------
40 230 80 120 37 10 20
--------
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
IS.