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WFB33N25 Dataheets PDF



Part Number WFB33N25
Manufacturers Wisdom technologies
Logo Wisdom technologies
Description N-Channel MOSFET
Datasheet WFB33N25 DatasheetWFB33N25 Datasheet (PDF)

PROVISIONAL Wisdom Semiconductor WFB33N25 N-Channel MOSFET Features ■ RDS(on) (Max 0.094 Ω )@VGS=10V ■ Gate Charge (Typical 37nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C) General Description This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices a.

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PROVISIONAL Wisdom Semiconductor WFB33N25 N-Channel MOSFET Features ■ RDS(on) (Max 0.094 Ω )@VGS=10V ■ Gate Charge (Typical 37nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C) General Description This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterruped power supply, motor control. Symbol 1. Gate{ { 2. Drain ● ◀▲ ● ● { 3. Source Absolute Maximum Ratings (* Drain current limited by junction temperature) Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Parameter Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (Note 1) (Note 2) (Note 1) (Note 3) Value 250 33* 20.4* 132* ±30 918 23.5 4.5 235 1.89 - 55 ~ 150 300 Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Min. - Value Typ. - Max. 0.53 62.5 Units V A A A V mJ mJ V/ns W W/°C °C °C Units °C/W °C/W Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA 250 -- ΔBVDSS Breakdown Voltage Temperature / ΔTJ Coefficient ID = 250 μA, Referenced to 25°C -- 0.25 IDSS Zero Gate Voltage Drain Current VDS = 250 V, VGS = 0 V VDS = 200 V, TC = 125°C -- --- -- IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -- -- 10 100 100 -100 V V/°C μA μA nA nA On Characteristics VGS(th) Gate Threshold Voltage RDS(on) Static Drain-Source On-Resistance Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = VGS, ID = 250 μA VGS = 10 V, ID = 16.5 A (Note 4) 2.0 -- 4.0 -- 0.077 0.094 V Ω VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 1650 -- 330 -- 40 ---- pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 125V, ID = 33 A, RG = 25 Ω VDS = 200 V, ID = 33A, VGS = 10 V (Note 4, 5) (Note 4, 5) -------- 40 230 80 120 37 10 20 -------- Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current IS.


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