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WFF6N90 Dataheets PDF



Part Number WFF6N90
Manufacturers Wisdom technologies
Logo Wisdom technologies
Description N-Channel MOSFET
Datasheet WFF6N90 DatasheetWFF6N90 Datasheet (PDF)

PROVISIONAL Wisdom Semiconductor WFF6N90 N-Channel MOSFET Features ■ RDS(on) (Max 2.4 Ω )@VGS=10V ■ Gate Charge (Typical 33nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C) General Description This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are w.

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PROVISIONAL Wisdom Semiconductor WFF6N90 N-Channel MOSFET Features ■ RDS(on) (Max 2.4 Ω )@VGS=10V ■ Gate Charge (Typical 33nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C) General Description This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. Symbol 1. Gate{ { 2. Drain ● ◀▲ ● ● { 3. Source TO-220F 123 Absolute Maximum Ratings *( Drain current limited by junction temperature) Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Parameter Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (Note 1) (Note 2) (Note 1) (Note 3) Value 900 6.0* 3.8* 24* ±30 650 16.7 4.5 56 0.48 - 55 ~ 150 300 Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Min. - Value Typ. - Max. 2.25 62.5 Units V A A A V mJ mJ V/ns W W/°C °C °C Units °C/W °C/W Copyright@Wisdom Semiconductor Inc., All rights reserved. WFF6N90 Electrical Characteristics ( TC = 25 °C unless otherwise noted ) Symbol Parameter Off Characteristics BVDSS Drain-Source Breakdown Voltage Δ BVDSS/ Breakdown Voltage Temperature Δ TJ coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage, Forward Gate-source Leakage, Reverse On Characteristics Test Conditions VGS = 0V, ID = 250uA ID = 250uA, referenced to 25 °C VDS = 900V, VGS = 0V VDS = 720V, TC = 125 °C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-state Resistance Dynamic Characteristics VDS = VGS, ID = 250uA VGS =10 V, ID = 3.0A Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Dynamic Characteristics td(on) tr td(off) tf Qg Qgs Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Qgd Gate-Drain Charge(Miller Charge) VGS =0 V, VDS =25V, f = 1MHz VDD =450V, ID =6.0A, RG =25Ω (Note 4, 5) VDS =720V, VGS =10V, ID =6.0A (Note 4, 5) Min 900 - - 3.0 - - - Typ Max Units --V 0.6 - V/°C - 10 uA - 100 uA - 100 nA - -100 nA - 5.0 1.95 2.4 V Ω 1500 120 12 - 50 100 50 60 33 10 - 13 - pF ns nC Source-Drain Diode Ratings and Characteristics Symbol Parameter Test Conditions IS Continuous Source Current Integral Reverse p-n Junction .


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