Document
PROVISIONAL
Wisdom Semiconductor
WFF6N90
N-Channel MOSFET
Features
■ RDS(on) (Max 2.4 Ω )@VGS=10V ■ Gate Charge (Typical 33nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C)
General Description
This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Symbol 1. Gate{
{ 2. Drain
●
◀▲
● ●
{ 3. Source
TO-220F
123
Absolute Maximum Ratings *( Drain current limited by junction temperature)
Symbol VDSS
ID
IDM VGS EAS EAR dv/dt
PD
TSTG, TJ TL
Parameter Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.
(Note 1)
(Note 2) (Note 1) (Note 3)
Value 900 6.0* 3.8* 24*
±30
650 16.7 4.5 56 0.48 - 55 ~ 150
300
Thermal Characteristics
Symbol
RθJC RθJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Min. -
Value Typ.
-
Max. 2.25 62.5
Units V A A A V mJ mJ
V/ns W
W/°C °C °C
Units
°C/W °C/W
Copyright@Wisdom Semiconductor Inc., All rights reserved.
WFF6N90
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Parameter
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
Δ BVDSS/ Breakdown Voltage Temperature Δ TJ coefficient
IDSS Drain-Source Leakage Current
IGSS
Gate-Source Leakage, Forward Gate-source Leakage, Reverse
On Characteristics
Test Conditions
VGS = 0V, ID = 250uA ID = 250uA, referenced to 25 °C VDS = 900V, VGS = 0V VDS = 720V, TC = 125 °C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V
VGS(th) Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-state Resistance
Dynamic Characteristics
VDS = VGS, ID = 250uA VGS =10 V, ID = 3.0A
Ciss Input Capacitance
Coss Output Capacitance Crss Reverse Transfer Capacitance Dynamic Characteristics
td(on) tr
td(off) tf Qg
Qgs
Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge
Qgd Gate-Drain Charge(Miller Charge)
VGS =0 V, VDS =25V, f = 1MHz
VDD =450V, ID =6.0A, RG =25Ω (Note 4, 5)
VDS =720V, VGS =10V, ID =6.0A (Note 4, 5)
Min
900
-
-
3.0 -
-
-
Typ Max Units
--V
0.6 - V/°C
- 10 uA
- 100 uA
- 100 nA
-
-100
nA
- 5.0 1.95 2.4
V Ω
1500 120 12
-
50 100 50 60 33 10 -
13 -
pF ns nC
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
Test Conditions
IS
Continuous Source Current
Integral Reverse p-n Junction
.