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IXRFD615X2 Dataheets PDF



Part Number IXRFD615X2
Manufacturers IXYS
Logo IXYS
Description 15A Dual Low-Side RF MOSFET Driver
Datasheet IXRFD615X2 DatasheetIXRFD615X2 Datasheet (PDF)

15 A Dual Low-Side RF MOSFET Driver IXRFD615X2 Description The IXRFD615X2 is a dual CMOS high-speed, high-current gate driver specifically designed to drive MOSFETs in PushPull and Class E Push-Pull HF RF applications as well as other applications requiring ultrafast rise and fall times or short minimum pulse widths. The IXRFD615X2 can source and sink 15 A of peak current per driver while producing voltage rise and fall times of less than 10 ns and minimum pulse widths of 8 ns. The inputs to th.

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15 A Dual Low-Side RF MOSFET Driver IXRFD615X2 Description The IXRFD615X2 is a dual CMOS high-speed, high-current gate driver specifically designed to drive MOSFETs in PushPull and Class E Push-Pull HF RF applications as well as other applications requiring ultrafast rise and fall times or short minimum pulse widths. The IXRFD615X2 can source and sink 15 A of peak current per driver while producing voltage rise and fall times of less than 10 ns and minimum pulse widths of 8 ns. The inputs to the driver are compatible with TTL or CMOS and are fully immune to latch up over the entire operating range. Designed with small internal delays, cross conduction or current shoot-through is virtually eliminated. The features and wide safety margin in operating voltage and power make the IXRFD615X2 unmatched in performance and value. The surface mount IXRFD615X2 is packaged in a lowinductance RF package incorporating advanced layout techniques to minimize stray lead inductances for optimum switching performance. The two drivers are constructed on a single substrate sharing a common ground via the substrate and therefore are not capable of ground isolated operation from each other. An example would be a half-bridge which requires a high-side floating and a ground referenced driver, which is not suitable, as compared to a push-pull configuration in which both drivers are ground referenced, making it a suitable application. Features  High Peak Output Current  Low Output Impedance  Low Quiescent Supply Current  Low Propagation Delay  High Capacitive Load Capability  Wide Operating Voltage Range Applications  RF MOSFET Driver  Push-Pull RF Generators  Multi-MHz Switch Mode Supplies  Pulse Transformer Driver  Pulse Laser Diode Driver  Pulse Generator Fig. 1 Block Diagram and Truth Table per Driver IN OUT 00 11 1 Absolute Maximum Ratings Parameter Supply Voltage VCC Input Voltage Level VIN All Other Pins Total Power Dissipation TA (AMBIENT) ≤ 25C TC (CASE) ≤ 25C Storage Temperature Soldering Lead Temperature (10 seconds maximum) 15 A Dual Low-Side RF MOSFET Driver IXRFD615X2 Value 30 V -5 V to VCC + 0.3 V -0.3 V to VCC +0.3 V 2W 100 W -40° C to 150° C 300° C Parameter Value Maximum Junction Temperature Operating Temperature Range 150° C -40° C to 85° C Thermal Impedance (Junction to Case) RӨJC 0.25° C/W Note: Operating the device outside of the “ Absolute Maximum Ratings” may cause permanent damage. Typical values indicate conditions for which the device is intended to be functional but do not guarantee specific performance limits. The guaranteed specifications apply only for the test conditions listed. Exposure to absolute maximum conditions for extended periods may impact device reliability. Electrical Characteristics Unless otherwise noted, TA = 25° C, 8 V < VCC < 30 V. All voltage measurements with respect to GND. IXRFD615X2 configured as described in Test Conditions for one driver. Symbol Parameter Test Conditions Min Typ Max Units VIH VIL VHYS VIN IIN VOH VOL ROH ROL IPEAK IDC tR tF High input voltage VCC = 15 V for typical value Low input voltage Input hysteresis VCC = 15 V for typical value Input voltage range Input current High output voltage Low output voltage 0 V≤ VIN ≤ VCC High output resistance VCC = 15 V IOUT = 100 mA Low output resistance VCC = 15 V IOUT = 100 mA Peak output current VCC = 15 V Continuous output current Rise time Fall time VCC=15 V CL=1 nF CL=2 nF VCC =15 V CL=1 nF CL=2 nF 3.5 -5 -10 VCC - 0.025 3V 2.8 0.23 0.8 VCC + 0.3 V V V 10 0.025 µA V V 0.5 Ω 0.35 Ω 14 A 1.3 A 4 ns 6 ns 4 ns 5.5 ns tONDLY tOFFDLY PWmin VCC ICC ON propagation delay OFF propagation delay Minimum pulse width Power supply voltage Power supply current VCC =15 V CL=2 nF VCC =15 V CL=2 nF FWHM VCC =15 V CL=1 nF Recommended VCC = 15 V, VIN = 0 V VCC = 15 V, VIN = 3.5 V VCC = 15 V, VIN = VCC 24 ns 22 ns 8 ns 8 15 18 V 0 1 mA 1 3 mA 0 5 mA CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD procedures when handling and assembling. All specifications are subject to change at any time without notice. 2 Output Resistance (Ω) Fig. 2 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 5 15 A Dual Low-Side RF MOSFET Driver IXRFD615X2 Output Resistance vs. Supply Voltage Fig. 3 3.5 Input Threshold vs. Supply Voltage Input Threshold (V) ROL ROH 3 VIH 2.5 VIL 2 1.5 1 0.5 10 15 Supply Voltage (V) 20 0 25 0 5 10 15 20 Vcc Supply Votage (V) 25 Rise Time (ns) Fig. 4 12 10 8 6 4 2 0 5 Rise Time vs. Supply Voltage Fig. 5 8 7 Fall Time (ns) CLOAD = 4nF CLOAD = 3nF CLOAD = 2nF CLOAD = 1nF 6 5 4 3 CLOAD = 0nF 2 1 10 15 Supply Voltage (V) 20 0 25 5 Fall Time vs. Supply Voltage CLOAD = 4nF CLOAD = 3nF CLOAD = 2nF CLOAD = 1nF CLOAD = 0nF 10 15 20 Supply Voltage (V) 25 Propagation Delay (ns) Fig. 6 Propagation Delay vs. Supply Voltage 40 35 30 tOFFDLY 25 tONDLY 20 15 10 5 0 5 10 15 20 25 Vcc supply voltage (V) Supply Current (mA) Fig. 7 Quiesc.


BAY96 IXRFD615X2 NTHS2101P


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