Document
15 A Dual Low-Side RF MOSFET Driver IXRFD615X2
Description
The IXRFD615X2 is a dual CMOS high-speed, high-current gate driver specifically designed to drive MOSFETs in PushPull and Class E Push-Pull HF RF applications as well as other applications requiring ultrafast rise and fall times or short minimum pulse widths. The IXRFD615X2 can source and sink 15 A of peak current per driver while producing voltage rise and fall times of less than 10 ns and minimum pulse widths of 8 ns. The inputs to the driver are compatible with TTL or CMOS and are fully immune to latch up over the entire operating range. Designed with small internal delays, cross conduction or current shoot-through is virtually eliminated. The features and wide safety margin in operating voltage and power make the IXRFD615X2 unmatched in performance and value.
The surface mount IXRFD615X2 is packaged in a lowinductance RF package incorporating advanced layout techniques to minimize stray lead inductances for optimum switching performance. The two drivers are constructed on a single substrate sharing a common ground via the substrate and therefore are not capable of ground isolated operation from each other. An example would be a half-bridge which requires a high-side floating and a ground referenced driver, which is not suitable, as compared to a push-pull configuration in which both drivers are ground referenced, making it a suitable application.
Features
High Peak Output Current Low Output Impedance Low Quiescent Supply Current Low Propagation Delay High Capacitive Load Capability Wide Operating Voltage Range
Applications
RF MOSFET Driver Push-Pull RF Generators Multi-MHz Switch Mode Supplies Pulse Transformer Driver Pulse Laser Diode Driver Pulse Generator
Fig. 1 Block Diagram and Truth Table per Driver
IN OUT 00 11
1
Absolute Maximum Ratings Parameter
Supply Voltage VCC
Input Voltage Level VIN
All Other Pins
Total Power Dissipation TA (AMBIENT) ≤ 25C TC (CASE) ≤ 25C
Storage Temperature
Soldering Lead Temperature (10 seconds maximum)
15 A Dual Low-Side RF MOSFET Driver IXRFD615X2
Value 30 V -5 V to VCC + 0.3 V -0.3 V to VCC +0.3 V
2W 100 W -40° C to 150° C 300° C
Parameter
Value
Maximum Junction Temperature Operating Temperature Range
150° C -40° C to 85° C
Thermal Impedance (Junction to Case) RӨJC 0.25° C/W
Note: Operating the device outside of the “ Absolute Maximum
Ratings” may cause permanent damage. Typical values indicate conditions for which the device is intended to be functional but do
not guarantee specific performance limits. The guaranteed specifications apply only for the test conditions listed. Exposure to absolute maximum conditions for extended periods may impact device reliability.
Electrical Characteristics
Unless otherwise noted, TA = 25° C, 8 V < VCC < 30 V. All voltage measurements with respect to GND. IXRFD615X2 configured as described in Test Conditions for one driver.
Symbol Parameter
Test Conditions
Min Typ Max Units
VIH VIL VHYS VIN IIN VOH VOL ROH ROL
IPEAK IDC
tR
tF
High input voltage
VCC = 15 V for typical value
Low input voltage Input hysteresis
VCC = 15 V for typical value
Input voltage range
Input current High output voltage Low output voltage
0 V≤ VIN ≤ VCC
High output resistance
VCC = 15 V IOUT = 100 mA
Low output resistance
VCC = 15 V IOUT = 100 mA
Peak output current
VCC = 15 V
Continuous output current Rise time
Fall time
VCC=15 V CL=1 nF CL=2 nF
VCC =15 V CL=1 nF CL=2 nF
3.5
-5 -10 VCC - 0.025
3V
2.8 0.23
0.8 VCC + 0.3
V V V
10 0.025
µA V V
0.5 Ω
0.35 Ω
14 A
1.3 A
4 ns 6 ns
4 ns 5.5 ns
tONDLY tOFFDLY PWmin VCC
ICC
ON propagation delay OFF propagation delay Minimum pulse width Power supply voltage
Power supply current
VCC =15 V CL=2 nF
VCC =15 V CL=2 nF FWHM VCC =15 V CL=1 nF Recommended VCC = 15 V, VIN = 0 V VCC = 15 V, VIN = 3.5 V VCC = 15 V, VIN = VCC
24 ns
22 ns
8 ns
8 15 18 V 0 1 mA 1 3 mA 0 5 mA
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD procedures when handling and assembling.
All specifications are subject to change at any time without notice.
2
Output Resistance (Ω)
Fig. 2
0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1
0 5
15 A Dual Low-Side RF MOSFET Driver IXRFD615X2
Output Resistance vs. Supply Voltage
Fig. 3 3.5
Input Threshold vs. Supply Voltage
Input Threshold (V)
ROL
ROH
3 VIH 2.5
VIL 2
1.5
1
0.5
10 15 Supply Voltage (V)
20
0 25 0
5 10 15 20
Vcc Supply Votage (V)
25
Rise Time (ns)
Fig. 4
12
10
8
6
4
2
0 5
Rise Time vs. Supply Voltage
Fig. 5
8
7
Fall Time (ns)
CLOAD = 4nF CLOAD = 3nF
CLOAD = 2nF CLOAD = 1nF
6 5 4 3
CLOAD = 0nF
2 1
10 15
Supply Voltage (V)
20
0 25 5
Fall Time vs. Supply Voltage
CLOAD = 4nF CLOAD = 3nF CLOAD = 2nF CLOAD = 1nF CLOAD = 0nF
10 15 20
Supply Voltage (V)
25
Propagation Delay (ns)
Fig. 6 Propagation Delay vs. Supply Voltage 40 35 30 tOFFDLY 25 tONDLY 20
15 10
5
0 5 10 15 20 25
Vcc supply voltage (V)
Supply Current (mA)
Fig. 7 Quiesc.