STD22NM20N

STD22NM20N N-CHANNEL 200V - 0.088Ω - 22A DPAK ULTRA LOW GATE CHARGE MDmesh™ II MOSFET Table 1: General Features TYPE VDSS RDS(on) ID STD22NM20N 200 V < 0.105 Ω 22 A s WORLDWIDE LOWEST GATE CHARGE s TYPICAL RDS(on) = 0.088 Ω s HIGH dv/dt and AVALANCHE CAPABILITIES s LOW INPUT CAPACITANCE s LOW GATE RESISTANCE DESCRIPTION This 200V MOSFET with a new advanced layout brings all unique advantages of MDmesh technology to lower voltages. The device exhibits worldwide lowest gate charge for any given onresistance. Its use is therefore ideal as primary switch in isolated DC-DC converters for Telecom and Computer applications. Used in combination with secondary-side low-voltage STripFET™ products, it contributes to reducting losses and boosting effeciency. Figure 1: Package 3 1 DPAK Figure 2: Internal Schematic Diagram APPLICATIONS The MDmesh™ family is very suitable for increasing power density allowing system miniaturization and higher efficiencies Table 2: Order Codes SALES TYPE STD22NM20NT4 MARKING D22NM20N PACKAGE DPAK PACKAGING TAPE & REEL June 2005 Rev. 4 1/10 STD22NM20N Table 3: Absolute Maximum ratings Symbol Parameter VDS Drain-source Voltage (VGS = 0) VDGR Drain-gate Voltage (RGS = 20 kΩ) VGS Gate- source Voltage ID Drain Current (continuous) at TC = 25° Drain Current (continuous) at TC = 100° IDM (*) Drain Current (pulsed) PTOT Total Dissipation at TC = 25°C Derating Factor dv/dt (2) Peak Diode Recovery voltage slope Tj Storage Temperature ...