Document
AMMC-6530 5–30 GHz Image Reject Mixer
Data Sheet
Vg drain
IF1
IF2
Chip Size: 1300 x 1400 µm Chip Size Tolerance: ±10 µm (±0.4 mils) Chip Thickness: 100 ± 10 µm (4 ± 0.4 mils)
gate
Vg
Description
Avago’s AMMC-6530 is an image reject mixer that operates from 5 to 30 GHz. The cold channel FET mixer is designed to be an easy-to-use component for any chip and wire application. It can be used drain pumped for low conversion loss applications, or when gate pumped the mixer can provide high linearity for SSB up‑conversion. An external 90‑degree hybrid is used to achieve image rejection and a -1V voltage reference is needed. Intended applications include microwave radios, 802.16, VSAT, and satellite receivers. Since this one mixer can cover several bands, the AMMC-6530 can reduce part inventory. The integrated mixer eliminates complex tuning and assembly processes typically required by hybrid (discrete-FET or diode) mixers. For improved reliability and moisture protection, the die is passivated at the active areas.
Features
• Broad Band Performance 5–30 GHz • Low Conversion Loss of 8 dB • High Image Rejection of 15–20 dB • Good 3rd Order Intercept of +18 dBm • Single -1V, no current Supply Bias
Applications
• Microwave Radio Systems • Satellite VSAT, DBS Up/Down Link • LMDS & Pt-Pt mmW Long Haul • Broadband Wireless Access (including 802.16 and
802.20 WiMax) • WLL and MMDS loops
Absolute Maximum Ratings[1]
Symbol Parameters/Conditions
Units Min. Max.
Vg Gate Supply Voltage
V 0 -3
Pin CW Input Power
dBm
25
Tch Operating Channel Temperature °C
+150
Tstg Storage Case Temperature
°C -65 +150
Tmax Max. Assembly Temp (60 sec max) °C
+300
Note: 1. Operation in excess of any one of these conditions may result in permanent
damage to this device.
Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model (Class A) ESD Human Body Model (Class 0) Refer to Avago Application Note A004R: Electrostatic Discharge Damage and Control.
AMMC-6530 DC Specifications/Physical Properties[1]
Symbol Parameters and Test Conditions Ig Gate Supply Current (under any RF power drive and temperature) Vg Gate Supply Operating Voltage
Note: 1. Ambient operational temperature TA=25°C unless otherwise noted.
Units mA
Typ. 0
V -1V
AMMC-6530 Typical Performance[2, 3] (TA= 25°C, Vg= -1V, IF frequency = 1 GHz, Zo=50 Ω)
Symbol
Parameters and Test Conditions
Units
Gate Pumped
FRF RF Frequency Range
GHz
FLO LO Frequency Range
GHz
FIF IF Frequency Range
GHz
5 – 30 5 – 30 DC – 5 Down Conversion
Up Conversion
PLO CG RL_RF RL_LO RL_IF IR LO-RF Iso. LO-IF Iso. RF-IF Iso. IIP3 P-1 NF
LO Port Pumping Power RF to IF Conversion Gain RF Port Return Loss LO Port Return Loss IF Port Return Loss Image Rejection Ratio LO to RF Port Isolation LO to IF Port Isolation RF to IF Port Isolation Input IP3, Fdelta=100 MHz, Prf = -10 dBm, Plo = 15 dBm Input Port Power at 1dB gain compression point, Plo=+10 dBm Noise Figure
dBm dB dB dB dB dB dB dB dB dBm
dBm
dB
>10 -10 5 10 10 15 22 25 15 18
8
10
>0 -15 5 10 10 15 25 25 15 —
—
—
Notes:
2. 3.
Small/Large signal data measured in a fully de-embedded test fixture form Specifications are derived from measurements in a 50Ω test environment.
TA
=
25°C.
Drain Pumped 5 – 30 5 – 30 DC – 5 Down Conversion >10 -8 10 5 10 15 22 25 15 10
0
12
AMMC-6530 RF Specifications in Drain Pumped Test Configuration[4, 5, 6]
(TA= 25°C, Vg= -1.0V, PLO= +10 dBm, Zo =50 Ω)
Symbol Parameters and Test Conditions
Units Min Typ. Max
CG Conversion Gain
f = 7 GHz f = 18 GHz f = 28 GHz
IR Image Rejection Ratio
dB -12.0 dB -10.0 dB -12.5
dB
-10.5 -8.0 -10.0
-23.5
-18
Notes: 4. Performance verified 100% on-wafer. 5. 100% on-wafer RF testing is done at RF frequency = 7, 18, and 28 GHz; IF frequency = 2 GHz. 6. The external 90 degree hybrid coupler is from M/A-COM: PN 2032-6344-00. Frequency 1.0 –
2.0 GHz.
AMMC-6530 Typical Performance under Gate Pumped Down Conversion Operation
(TA = 25°C, Vg = -1V, Zo = 50Ω)
RF
Vg drain
CONVERSION GAIN (dB)
LSB
IF1
gate
Vg
IF2
USB
-1V
LO
Note: The external 90° hybrid coupler is from M/ACOM: PN 2032-6344-00. Frequency is 1.0 – 2.0 GHz.
Highly linear down conversion or up conversion mixer application (Gate pumped mixer operation)
0
-5
-10
-15
-20
-25
-30
-35
-40 USB(dB) -45 LSB(dB)
-50 5 10 15 20 25 30 FREQUENCY (GHz)
Figure 1. Conversion Gain with IF terminated for High Side Conversion LO=+10 dBm, IF=1 GHz.
20
15
10
5
0 5 10 15 20 FREQUENCY (GHz)
Figure 4. Noise Figure. LO=+7 dBm, IF=1 GHz.
25
30
IIP3 (dBm)
CONVERSION GAIN (dB)
0 -5 -10 -15 -20 -25 -30 -35 -40 USB(dB) -45 LSB(dB) -50
5 10 15 20 25 30 FREQUENCY (GHz)
Figure 2. Conversion Gain with IF terminated for Low Side Conversion LO=+10 dBm, IF=1 GHz.
25
20
15
10 Plo=15(d.