CHA2110-98F

CHA2110-98F S21 (dB) NF (dB) 7-12GHz LNA GaAs Monolithic Microwave IC Description The CHA2110-98F is a monolithic two-stages wide band low noise amplifier circuit. It is self-biased. It is designed for military, space and telecommunication systems. VD1 VD2 The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, and air bridges. IN It is available in chip form. OUT Main Features ■ Broadband performances: 7-12GHz ■ Linear gain: 19dB ■ Return Losses: 12dB ■ Noise Figure: 1.2dB ■ Output power @ 1dBcomp: 11dBm ■ DC bias: Vd=4 Volt@Id=45mA ■ Chip size 1.93x1.3x0.1mm 25 5.0 24 4.5 23 4.0 22 3.5 21 20 S21 3.0 2.5 19 2.0 18 1.5 17 NF 1.0 16 0.5 15 0.0 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 Frequency (GHz) Gain and NF versus frequency Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Freq Frequency range Gain Linear Gain NF Noise Figure Pout Output Power @1dB comp (f=10GHz) Min Typ Max Unit 7 12 GHz 19 dB 1.2 dB 11 dBm Ref. : DSCHA21102181 - 29 Jun 12 1/10 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA2110-98F Electrical Characteristics Tamb.= +25°C Symbol Parameter Min Freq Frequency range 7 Gain Linear Gain NF Noise Figure RL_in Input return losses RL_out Output return losses P1dB I...