CHA2159

CHA2159 RoHS COMPLIANT 55-65GHz Low Noise / Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA2159 is a four - stage low noise and medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounded. This simplifies the assembly process. The circuit is manufactured with a pHEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. Main Features ■ 4.0 dB noise figure ■ 20 dB gain ■ 14 dBm output power (-1dB gain comp.) ■ DC power consumption, 115mA @ 3.5V ■ Chip size: 2.35 x 1.11 x 0.10 mm Gain & RLosses (dB) 22 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -12 -14 55 dBS11 dBS22 dBS21 NF Ty p. 60 Frequency (GHz) 65 Typical on Wafer Measurements Main Characteristics Tamb = +25°C, Vd = 3.5V Symbol Fop G NF P1dB Id Parameter Operating frequency range Small signal gain Noise figure Output power at 1dB gain compression Bias current Min Typ Max 55 65 18 20 4.0 4.8 13 14 115 150 ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions! Unit GHz dB dB dBm mA Ref. : DSCHA21597262 - 19 Sep 07 1/6 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA2159 55-65GHz Low Noise ...