CHA3396-QDG

CHA3396-QDG 27-33.5GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3396-QDG is a 3 stage monolithic medium power amplifier, which produces 22dB gain for 19dBm output power. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in RoHS compliant SMD package. UMS AA3363689786A YYYYWWWWG Main Features ■ Broadband performances: 27-33.5GHz ■ 19dBm Pout at 1dB compression ■ 22dB gain ■ 30dBm OTOI ■ DC bias: Vd= 4.0V, Id= 155mA ■ 24L-QFN4x4 (QDG) ■ MSL1 Output power (dBm), PAE (%) Output Power & PAE versus Frequency 30 28 26 24 22 20 18 16 14 Psat P-1dB PAE sat 12 10 23 24 25 26 27 28 29 30 31 32 33 Frequency (GHz) 34 Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Freq Frequency range Gain Linear Gain P-1dB Output Power @1dB comp. OTOI 3rd order Intercept point Min Typ Max Unit 27.0 33.5 GHz 22 dB 19 dBm 30 dBm Ref. : DSCHA3396-QDG5260 -17 Sep 15 1/16 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA3396-QDG 27-33.5GHz Medium Power Amplifier Electrical Characteristics Tamb.= +25°C, V...