5.8-17GHz Low Noise Amplifier
UMS 368687A YWWG
CHA3656-QAG
UMS A366878A YYWWG
5.8-17GHz Low Noise Amplifier
GaAs Monolithic Microwave IC in SMD lea...
Description
UMS 368687A YWWG
CHA3656-QAG
UMS A366878A YYWWG
5.8-17GHz Low Noise Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA3656-QAG is a two-stage selfbiased wide band monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in RoHS compliant SMD package.
UMUMSSUMS A36A683786AA53666878A YYYWYWWWYYGWWG
Gain & NF (dB)
UMS A368687A YYWWG
Main Features
■ Broadband performances: 5.8- 17GHz ■ 1.7dB noise figure ■ 24dBm 3rd order intercept point ■ 14dBm power at 1dB compression ■ 20dB gain ■ Low DC power consumption ■ 16L-QFN3X3 SMD package
Gain & Noise figure (dB)
28
26
24
22
20
18
16
14
12
Gain
NF
10
8
6
4
2
0
5 6 7 8 9 10 11 12 13 14 15 16 17 18
Frequency (GHz)
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq Frequency range
Gain Linear Gain
NF Noise Figure
P1dB Output Power @1dB comp.
Min Typ Max Unit
5.8 17.0 GHz
18 20.0
dB
1.7 2 dB
13.0 14.0
dBm
Ref. : DSCHA3656-QAG3156 - 05 Jun 13
1/14 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA3656-QAG
5.8-17GHz Low Noise...
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