CHA3667A

CHA3667a RoHS COMPLIANT 7-20GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description Vd The CHA3667a is a wide band monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a Power pHEMT process, 0.15µm gate length, via hole through the substrate. It is ESD protected on RF ports thanks to DC specific filter circuits. It is supplied in chip form. Main Features ■ Broadband performance 7-20GHz ■ Self biased ■ 23dB gain @ 2.7dB noise figure ■ 20 dBm Output power at 1dB compression ■ DC power consumption, 175mA @ 4.2V ■ Chip size : 2,45 x 1,21 x 0,1mm Gain & Return Losses (dB) RFin RFout On wafer typical measurements 30 S21 25 20 15 10 5 0 -5 -10 S11 -15 S22 -20 -25 -30 0 2 4 6 8 10 12 14 16 18 20 22 24 26 Frequency ( GHz) Main Characteristics Tamb = +25°C Symbol Parameter Min Typ Max Unit Fop Input frequency range 7 20 GHz G Small signal gain 23 dB NF Noise Figure 2.7 3.5 dB P-1dB Output power at 1dB gain compression 21 23 dBm Id Bias current 130 175 220 ESD Protections : Electrostatic discharge sensitive device observe handling precautions ! mA Ref. : DSCHA3667a0158 - 07 Jun 10 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA3667a 7-20GHz Amplifier Electrical Chara...