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CHA4105-99F Dataheets PDF



Part Number CHA4105-99F
Manufacturers United Monolithic Semiconductors
Logo United Monolithic Semiconductors
Description 2-4GHz Driver
Datasheet CHA4105-99F DatasheetCHA4105-99F Datasheet (PDF)

CHA4105-99F RoHS COMPLIANT 2-4GHz Driver GaAs Monolithic Microwave IC Description The CHA4105-99F is a monolithic two-stage driver amplifier delivering 24dBm output power @ 1dB gain compression in the 2-4GHz frequency range. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chi.

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CHA4105-99F RoHS COMPLIANT 2-4GHz Driver GaAs Monolithic Microwave IC Description The CHA4105-99F is a monolithic two-stage driver amplifier delivering 24dBm output power @ 1dB gain compression in the 2-4GHz frequency range. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. IN V+ V- Main Features ■ Broadband performances: 2-4GHz ■ 24dBm @ 1dB gain compression ■ 23dB Gain ■ DC bias: V+ = 5V ; V- = -5V ■ DC power consumption: 180mA ■ Chip size: 2.07 x 1.6 x 0.1 mm OUT +25°C-40°C +85°C Main Characteristics Tamb.= +25°C Symbol Parameter Min Typ Max Unit Freq Frequency range 2 4 GHz Gain Linear Gain 23 dB P_1dB Output Power @1dB comp. 24 dBm ESD Protections: Electrostatic discharge sensitive device. Observe handling precautions! Ref. : DSCH41051035 - 07 Feb11 1/12 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - BP46 - 91401 Orsay Cedex France Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 CHA4105-99F 2-4GHz Driver Main Characteristics Tamb.= +25°C Symbol Parameter Min Typ Max Unit Freq Frequency range 2 4 GHz Gain Linear Gain 23 dB RL_in Input Return Loss 15 dB RL_out Output Return Loss 18 dB P_1dB Output power @ 1dB gain compression 24 dBm PAE_1dB Power Added Efficiency @ 1dBcomp. 28 % V+ Positive supply voltage 5V V- Negative supply voltage I+ Positive supply quiescent current (1) -5 V 180 mA I- Negative supply quiescent current 5 mA I+_1dB Positive current @ 1dB gain compression 220 mA These values are representative of onboard measurements as defined on the drawing in paragraph "Evaluation mother board". (1) Parameter can be adjusted by tuning of V-. Absolute Maximum Ratings (1) Tamb.= +25°C Symbol Parameter Values Unit V+ Positive supply voltage 6.5V V I+ Positive supply quiescent current 240 mA V- Negative supply voltage Tj Junction temperature (2) -3.75 175 V °C Cmp Compression level 6 dB I+_sat Supply current in saturation 320 mA Ta Operating temperature range -40 to +85 °C Tstg Storage temperature range -55 to +155 °C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Thermal Resistance channel to ground paddle = 101°C/W for T= +85°C. Ref. : DSCH41051035 - 07 Feb11 2/12 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice 2-4GHz Driver CHA4105-99F Typical on-wafer Sij parameters Tamb.= +25°C, V+ = +8V, I+ = 180mA Freq (GHz) S11 PhS11 (dB) (°) S12 (dB) 0.10 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00 5.50 6.00 6.50 7.00 7.50 8.00 8.50 9.00 9.50 10.00 -0.36 -1.29 -1.94 -8.45 -19.45 -16.35 -27.33 -18.68 -19.87 -9.94 -4.07 -2.17 -1.47 -1.27 -1.01 -0.65 -0.48 -0.41 -0.34 -0.28 -0.23 -6.99 -27.40 -61.11 -129.10 -9.13 -40.67 -65.04 37.43 -55.35 160.10 106.30 74.95 54.99 41.32 32.22 23.53 15.71 9.02 3.12 -2.20 -7.02 -69.84 -39.33 -39.27 -40.31 -42.17 -42.04 -41.93 -42.83 -44.60 -46.99 -50.19 -54.83 -57.93 -56.29 -59.51 -73.34 -65.74 -70.70 -75.00 -67.47 -57.14 PhS12 (°) 178.30 -1.72 -124.00 125.30 33.05 -40.67 -107.90 -173.80 126.30 66.06 1.40 -50.90 -75.28 -107.10 -174.20 139.70 -158.40 76.88 -91.93 23.62 -31.86 S21 (dB) -33.96 -11.29 -1.79 17.67 22.70 23.65 23.97 23.21 21.53 18.51 13.84 9.24 5.80 3.30 -1.03 -8.82 -16.52 -23.22 -28.39 -33.03 -36.77 PhS21 (°) -95.60 117.70 146.90 68.32 -40.78 -119.90 167.90 98.09 30.41 -37.00 -95.76 -141.90 176.20 127.00 63.07 11.05 -22.61 -47.81 -70.68 -93.57 -111.10 S22 (dB) -0.58 -1.96 -6.02 -14.87 -39.04 -20.64 -19.19 -24.13 -14.51 -9.41 -6.39 -4.74 -3.73 -3.02 -2.30 -1.71 -1.30 -0.98 -0.76 -0.57 -0.45 PhS22 (°) -15.89 -72.56 -141.70 154.80 -50.42 -64.11 -97.03 -50.70 -33.10 -46.44 -63.91 -79.58 -92.33 -102.30 -110.50 -119.30 -127.50 -134.70 -141.20 -147.30 -153.30 Ref. : DSCH41051035 - 07 Feb11 3/12 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice CHA4105-99F Typical Test fixture Measurements V+ = +5V, V- = -5V, I+ = 180mA, I- = 2mA Linear Gain 2-4GHz Driver -40°C +25°C +85°C In/out Return Loss Input & Output return loss (dB) Input Output Ref. : DSCH41051035 - 07 Feb11 4/12 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice 2-4GHz Driver CHA4105-99F Typical Test fixture Measurements V+ = +5V, V- = -5V, I+ = 180mA, I- = 2mA Output power @ 1dB gain compression versus Frequency & Temperature -40°C +25°C +85°C Output power @ 1dB gain compression (dBm) I+ @ 1dB gain compress.


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