CHA4107-QDG

CHA4107-QDG C-band Medium Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA4107-QDG is a monolithic two-stage GaAs medium power amplifier designed for C-Band applications. The MPA provides typically 25.5dBm output power associated to 30% power added efficiency at 1dB gain compression. It is supplied in RoHS compliant SMD package. UUMMSS YYYAAWY43WW16068W787AG Main Features  Frequency band: 4.5-6.5GHz  Output power: 25.5dBm @ 1dBcomp  Linear gain: 22.5dB  High PAE: 30% @ 1dBcomp  Quiescent bias point: Vd=8V, Id=120mA  24L-QFN4x4  MSL3 Pout (dBm) & PAE (%) 45 43 41 39 37 35 33 31 29 27 25 23 21 19 17 15 4 25 23 21 19 17 15 13 11 PAE_1dBc @ Temp=25°C Pout_1dBc @ Temp=25°C Linear Gain @ Temp=25°C 9 7 5 4.5 5 5.5 6 6.5 Frequency (GHz) Gain (dB) Main Characteristics Tamb = 25°C, Vd = 8V, Id (Quiescent) = 120mA, Drain Pulse width= 50µs, Duty cycle = 10% Symbol Parameter Min Typ Max Unit Fop Operating frequency range 4.5 6.5 GHz PAE_P-1dB Power added efficiency @1dBcomp & 25°C 30 % P-1dB Output power @ 1dBcomp @ 25°C 25.5 dBm Ref. : DSCHA4107-QDG4188 - 07 Jul 14 1/12 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA4107-QDG C-band Medium Power Amplifier Electrical Characteristics Tamb = +25°C, Vd = 8V, Id (Quiesce...