CHA5050-99F

CHA5050-99F 17-26GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA5050-99F is a four stage monolithic MPA that provides typically 25.5dBm of output power associated to 20% of power added efficiency at 3dB gain compression. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Main Features  0.25µm Power pHEMT Technology  Frequency band: 17-26GHz  Output power: 25.5dBm @ 3dBcomp  Linear gain: 22dB  Quiescent bias point: Vd=6V, Id=230 mA  Chip size: 2.38x1.14x0.07mm Main Electrical Characteristics Tamb =+25°C, Vd = 6V, Id (Quiescent) = 230 mA, CW mode. Symbol Parameter Freq Frequency range Gain Linear Gain Pout Output Power @1dB comp. Min Typ Max Unit 17.0 26.0 GHz 22.0 dB 25.0 dBm Ref.: DSCHA50502152 - 31 May 12 1/10 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA5050-99F 17-26GHz Medium Power Amplifier Electrical Characteristics Tamb =+25°C, Vd = 6V, Id (Quiescent) = 230 mA, CW mode. Symbol Parameter Min Typ Max Unit Fop Operating frequency 17 26 GHz G Small signal gain 22 dB RLin Input Return Loss 8 dB ...