CHA5050-QDG

CHA5050-QDG RoHS COMPLIANT 17-24GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA5050-QDG is a medium power amplifier four stages monolithic circuit. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in RoHS compliant SMD package. UUMMSS AA3560685780A YYYYWWWWG Main Features ■ Broadband performances: 17-24GHz ■ 22dB Linear Gain ■ 25dBm Pout @ 1dB comp ■ 30dBm Output IP3 ■ DC bias: Vd=6.0Volt@Id=230mA ■ 24L-QFN4x4 ■ MSL1 Main Electrical Characteristics Tamb.= +25°C, Vd = Vd1 = Vd2 = Vd3 = Vd4 = 6.0V, Id = 230mA Symbol Parameter Min Typ Max Unit Freq Frequency range 17 24 GHz Gain Linear Gain 22 dB P1dB Output power @ 1dB compression 25 dBm Psat Saturated output power 26 dBm OIP3 Output IP3 30 dBm Ref. : DSCHA5050QDG1216 - 04 Aug 11 1/14 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - BP46 - 91401 Orsay Cedex France Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 CHA5050-QDG 17-24GHz Medium Power Amplifier Electrical Characteristics Tamb.= +25°C, Vd = Vd1 = Vd2 = Vd3 = Vd4 = 6.0V Symbol Parameter Min Typ Max Unit Fop Operating frequency range 17 24 GHz G Small Signal Gain 22 dB P1dB Output power @ 1dB com...