CHA5250-QDG

CHA5250-QDG 5.5-9GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA5250-QDG is a three stages monolithic GaAs medium power circuit, close to 1 Watt output power. It is designed for commercial communication systems. The circuit is manufactured with a pHEMT process, 0.5µm gate length. Main Features ■ Broadband performances: 5.5-9GHz ■ 26dB Linear Gain ■ 28dBm output power @1dB comp. ■ 36dBm output TOI ■ 30% PAE@1dB compression ■ DC bias: Vd=7Volt@Id=280mA ■ 24L-QFN4x4 Gain & Return Losses (dB) 30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 0 Gain & RLoss S11 S21 S22 5 10 Frequency (GHz) 15 20 Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Freq Frequency range Gain Linear Gain OTOI Output TOI Pout Output Power @1dB comp. Min Typ Max Unit 5.5 9.0 GHz 26.0 dB 36.0 dBm 28.0 dBm Ref. : DSCHA5250-QDG-Full-2355 - 20 Dec 12 1/16 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA5250-QDG 5.5-9GHz Medium Power Amplifier Electrical Characteristics Tamb.= +25°C, Vd = +7.0V Symbol Parameter Min Typ Max Unit Freq Frequency range 5.5 9 GHz Gain Linear Gain 26 dB RL_in Input Return Loss -12 dB RL_out Output Return Loss -10 dB OP1dB Output power @1dB compression 28 dBm Psat Saturated output power 30 dBm OIP3 Out...