CHA5266-QDG

CHA5266-QDG 10-16 GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA5266-QDG is a three stage monolithic GaAs medium power amplifier. It is designed for a wide range of applications, from professional to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in RoHS compliant SMD package. UUMMSS AA3562686786A YYYYWWWWG Main Features ■ Broadband performances: 10-16GHz ■ 23dB Linear Gain ■ 25.5dBm output power @ 1dB comp. ■ 35dBm output IP3 ■ DC bias: Vd=5.0Volt@Id=320mA ■ 24L-QFN4x4 ■ MSL1 Gain & Return Losses (dB) 30 25 20 S21 15 10 S11 5 S22 0 -5 -10 -15 -20 -25 -30 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 Freq (GHz) Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Freq Frequency range Gain Linear Gain OIP3 Output TOI Pout Output Power @1dB comp. Min Typ Max Unit 10 16 GHz 23 dB 35 dBm 25.5 dBm Ref. : DSCHA5266-QDG3233 - 21 Aug 13 1/14 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA5266-QDG 10-16 GHz Medium Power Amplifier Electrical Characteristics Tamb.= +25°C, Vd = +5.0V Symbol Parameter Min Typ Max Unit Freq Frequency range 10 16 GHz Gain Linear Gain ...