SOT457
PMN42XPEA
20 V, P-channel Trench MOSFET
21 March 2014
Product data sheet
1. General description
P-channel enha...
SOT457
PMN42XPEA
20 V, P-channel Trench MOSFET
21 March 2014
Product data sheet
1. General description
P-channel enhancement mode Field-Effect
Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
Fast switching Trench MOSFET technology 2 kV ESD protection AEC-Q101 qualified
3. Applications
Relay driver High-speed line driver High-side loadswitch Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state resistance
Conditions Tj = 25 °C
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = -4.5 V; ID = -3 A; Tj = 25 °C
Min Typ Max Unit
- - -20 V
-12 -
12 V
[1] - - -5.7 A
- 41 46 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
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NXP Semiconductors
PMN42XPEA
20 V, P-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain
Simplified outline
654
Graphic symbol
D
123
TSOP6 (SOT457)
G
S 017aaa259
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMN42XPEA
TSOP6
Description plastic surface-mounted package (TSOP6); 6 leads
Version ...