SPN2N7002K
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN2N7002K is the N-Channel enhancement mode field effect ...
SPN2N7002K
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN2N7002K is the N-Channel enhancement mode field effect
transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 640mA DC and can deliver pulsed currents up to 950mA. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
APPLICATIONS
Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories,
Transistors, etc.
High saturation current capability. Direct
Logic-Level Interface: TTL/CMOS Battery Operated Systems Solid-State Relays
FEATURES 60V/0.50A , RDS(ON)= 2.0Ω@VGS=10V 60V/0.20A , RDS(ON)= 4.0Ω@VGS= 4.5V
Super high density cell design for extremely low
RDS (ON) Exceptional on-resistance and maximum DC
current capability SOT-23 package design
PIN CONFIGURATION(SOT-23)
PART MARKING
2015/03/18 Ver.1
Page 1
SPN2N7002K
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION Pin 1 2 3
Symbol G S D
Description Gate Source Drain
ORDERING INFORMATION
Part Number
Package
SPN2N7002KS23RGB
SOT-23
※ SPN2N7002KS23RGB : Tape Reel ; Pb – Free ; Halogen – Free
Part Marking NKXX
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate –...