DatasheetsPDF.com

MAC212A8FP

ON Semiconductor

Triacs

MAC212A6FP, MAC212A8FP, MAC212A10FP Preferred Device Triacs Silicon Bidirectional Thyristors Designed primarily for ful...


ON Semiconductor

MAC212A8FP

File Download Download MAC212A8FP Datasheet


Description
MAC212A6FP, MAC212A8FP, MAC212A10FP Preferred Device Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied main terminal voltage with positive or negative gate triggering. Blocking Voltage to 800 Volts All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability Gate Triggering Guaranteed in Four Modes Indicates UL Registered — File #E69369 Device Marking: Logo, Device Type, e.g., MAC212A6FP, Date Code MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Peak Repetitive Off−State Voltage(1) (TJ = −40 to +125°C, Sine Wave, 50 to 60 Hz, Gate Open) MAC212A6FP MAC212A8FP MAC212A10FP VDRM, VRRM 400 600 800 On-State RMS Current (TC = +85°C)(2) Full Cycle Sine Wave 50 to 60 Hz IT(RMS) 12 Unit Volts Amps Peak Non−repetitive Surge Current (One Full Cycle, Sine Wave, 60 Hz, TC = +85°C) Preceded and followed by rated current Circuit Fusing Consideration (t = 8.3 ms) ITSM I2t 100 Amps 40 A2s Peak Gate Power (TC = +85°C, Pulse Width = 10 μs) Average Gate Power (TC = +85°C, t = 8.3 ms) Peak Gate Current (TC = +85°C, Puls...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)