Triacs. MAC218A6FP Datasheet

MAC218A6FP Triacs. Datasheet pdf. Equivalent


ON Semiconductor MAC218A6FP
MAC218A6FP, MAC218A8FP
MAC218A10FP
Preferred Devices
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
light dimmers, motor controls, heating controls and power supplies.
Blocking Voltage to 800 Volts
Glass Passivated Junctions for Greater Parameter Uniformity and
Stability
Isolated TO220 Type Package for Ease of Mounting
Gate Triggering Guaranteed in Four Modes
Indicates UL Registered File #E69369
Device Marking: Logo, Device Type, e.g., MAC218A6FP, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive OffState Voltage
(Note 1.) (TJ = 40 to +125°C,
Sine Wave 50 to 60 Hz, Gate Open)
MAC218A6FP
MAC218A8FP
MAC218A10FP
VDRM,
VRRM
Volts
400
600
800
On-State RMS Current (TC = +80°C)
(Note 2.)
Full Cycle Sine Wave 50 to 60 Hz
IT(RMS)
8.0 Amps
Peak NonRepetitive Surge Current
(One Full Cycle, 60 Hz, TC = +80°C)
Preceded and followed by rated current
Circuit Fusing Considerations
(t = 8.3 ms)
ITSM
I2t
100 Amps
40 A2s
Peak Gate Power
(TC = +80°C, Pulse Width = 10 μs)
Average Gate Power
(TC = +80°C, t = 8.3 ms)
Peak Gate Current
(TC = +80°C, Pulse Width = 10 μs)
RMS Isolation Voltage
Relative Humidity p
(2T0A%=)25°(C,
)
PGM
PG(AV)
IGM
V(ISO)
16
0.35
4.0
1500
Watts
Watt
Amps
Volts
Operating Junction Temperature
TJ
40 to
°C
+125
Storage Temperature Range
Tstg
40 to
°C
+150
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2. The case temperature reference point for all TC measurements is a point on
the center lead of the package as close as possible to the plastic body.
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ISOLATED TRIAC (
8 AMPERES RMS
400 thru 800 VOLTS
)
MT2
MT1
G
MARKING
DIAGRAM
1
2
3
ISOLATED
TO220 Full Pack
CASE 221C
STYLE 3
YY WW
MAC218
AxxFP
MAC218AxxFP = Specific Device Code
xx = 6, 8 or 10
YY = Year
WW = Work Week
PIN ASSIGNMENT
1 Main Terminal 1
2 Main Terminal 2
3 Gate
ORDERING INFORMATION
Device
Package
Shipping
MAC218A6FP ISOLATED TO220FP 500/Box
MAC218A8FP ISOLATED TO220FP 500/Box
MAC218A10FP ISOLATED TO220FP 500/Box
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 3
1
Publication Order Number:
MAC218A6FP/D


MAC218A6FP Datasheet
Recommendation MAC218A6FP Datasheet
Part MAC218A6FP
Description Triacs
Feature MAC218A6FP; MAC218A6FP, MAC218A8FP MAC218A10FP Preferred Devices Triacs Silicon Bidirectional Thyristors Design.
Manufacture ON Semiconductor
Datasheet
Download MAC218A6FP Datasheet




ON Semiconductor MAC218A6FP
MAC218A6FP, MAC218A8FP MAC218A10FP
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction to Case
RθJC
2.2
Thermal Resistance, Case to Sink
RθCS
2.2 (typ)
Thermal Resistance, Junction to Ambient
RθJA
60
Maximum Lead Temperature for Soldering Purposes 1/8from Case for 10 Seconds
TL
260
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min Typ
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
ON CHARACTERISTICS
TJ = 25°
TJ = 125°C
IDRM,
IRRM
−−
−−
Peak On-State Voltage (Note 1)
(ITM = "11.3 A Peak)
Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 100 Ω)
MT2(+), G(+)
MT2(+), G()
MT2(), G()
MT2(), G(+)
VTM
1.7
IGT
−−
−−
−−
−−
Gate Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G()
MT2(), G()
MT2(), G(+)
VGT
0.9
0.9
1.1
1.4
Gate NonTrigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 V, RL = 100 Ω, TJ = +125°C)
All Four Quadrants
VGD
0.2
Holding Current
(VD = 12 Vdc, Gate Open, Initiating Current = "200 mA)
DYNAMIC CHARACTERISTICS
IH − −
Critical Rate of Rise of Commutating OffState Voltage
(VD = Rated VDRM, ITM = 11.3 A, Commutating
di/dt = 4.1 A/ms, Gate Unenergized, TC = 80°C)
Critical Rate of Rise of OffState Voltage
(VD = Rated VDRM, Exponential Voltage Rise, Gate Open,
TJ = 125°C)
1. Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%.
dv/dt(c)
dv/dt
5.0
100
Unit
°C/W
°C/W
°C/W
°C
Max Unit
10 μA
2.0 mA
2.0 Volts
mA
50
50
50
75
Volts
2.0
2.0
2.0
2.5
Volts
50 mA
V/μs
V/μs
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ON Semiconductor MAC218A6FP
MAC218A6FP, MAC218A8FP MAC218A10FP
Symbol
VDRM
IDRM
VRRM
IRRM
VTM
IH
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Parameter
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
Maximum On State Voltage
Holding Current
IRRM at VRRM
on state
IH
Quadrant 3
MainTerminal 2
VTM
VTM
IH
off state
Quadrant 1
MainTerminal 2 +
+ Voltage
IDRM at VDRM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
(+) MT2
Quadrant II
IGT
() IGT
GATE
MT1
REF
() MT2
(+) IGT
GATE
MT1
REF
() MT2
Quadrant I
+ IGT
Quadrant III
() IGT
GATE
MT1
REF
(+) IGT
GATE
MT1
REF
Quadrant IV
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With inphase signals (using standard AC lines) quadrants I and III are used.
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