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MAC218A6FP

ON Semiconductor

Triacs

MAC218A6FP, MAC218A8FP MAC218A10FP Preferred Devices Triacs Silicon Bidirectional Thyristors Designed primarily for ful...


ON Semiconductor

MAC218A6FP

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Description
MAC218A6FP, MAC218A8FP MAC218A10FP Preferred Devices Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies. Blocking Voltage to 800 Volts Glass Passivated Junctions for Greater Parameter Uniformity and Stability Isolated TO−220 Type Package for Ease of Mounting Gate Triggering Guaranteed in Four Modes Indicates UL Registered − File #E69369 Device Marking: Logo, Device Type, e.g., MAC218A6FP, Date Code MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off−State Voltage (Note 1.) (TJ = −40 to +125°C, Sine Wave 50 to 60 Hz, Gate Open) MAC218A6FP MAC218A8FP MAC218A10FP VDRM, VRRM Volts 400 600 800 On-State RMS Current (TC = +80°C) (Note 2.) Full Cycle Sine Wave 50 to 60 Hz IT(RMS) 8.0 Amps Peak Non−Repetitive Surge Current (One Full Cycle, 60 Hz, TC = +80°C) Preceded and followed by rated current Circuit Fusing Considerations (t = 8.3 ms) ITSM I2t 100 Amps 40 A2s Peak Gate Power (TC = +80°C, Pulse Width = 10 μs) Average Gate Power (TC = +80°C, t = 8.3 ms) Peak Gate Current (TC = +80°C, Pulse Width = 10 μs) RMS Isolation Voltage Relative Humidity p (2T0A%=)25°(C, ) PGM PG(AV) IGM V(ISO) 16 0.35 4.0 1500 Watts Watt Amps Volts Operating Junction Temperature TJ −40 to °C +125 Storage Temperature Range Tstg −40 to °C +150 1. VDRM and VRRM for all types can be applied on a continuo...




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