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MAC223A6FP

ON Semiconductor

Triacs

MAC223A6FP, MAC223A8FP, MAC223A10FP Preferred Device Triacs Silicon Bidirectional Thyristors Designed primarily for ful...


ON Semiconductor

MAC223A6FP

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Description
MAC223A6FP, MAC223A8FP, MAC223A10FP Preferred Device Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as lighting systems, heater controls, motor controls and power supplies; or wherever full−wave silicon−gate−controlled devices are needed. Off−State Voltages to 800 Volts All Diffused and Glass Passivated Junctions for Parameter Uniformity and Stability Small, Rugged Thermowatt Construction for Thermal Resistance and High Heat Dissipation Gate Triggering Guaranteed in Four Modes Indicates UL Registered — File #E69369 Device Marking: Logo, Device Type, e.g., MAC223A6FP, Date Code MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Peak Repetitive Off−State Voltage(1) (TJ = −40 to +125°C, Sine Wave 50 to 60 Hz, Gate Open) MAC223A6FP MAC223A8FP MAC223A10FP VDRM, VRRM 400 600 800 Unit Volts On-State RMS Current (TC = +80°C)(2) Full Cycle Sine Wave 50 to 60 Hz IT(RMS) 25 Amps Peak Non−repetitive Surge Current (One Full Cycle, 60 Hz, TC = 80°C) Preceded and followed by rated current ITSM 250 Amps Circuit Fusing (t = 8.3 ms) I2t 260 A2s Peak Gate Power (t p 2 μsec; TC = +80°C) Average Gate Power (t = 8.3 ms; TC = +80°C) Peak Gate Current (t p 2 μsec; TC = +80°C) Peak Gate Voltage (t p 2 μsec; TC = +80°C) RMS Isolation Voltage (TA = 25°C, Relative Humidity p 20%) ( ) PGM PG(AV) IGM VGM V(ISO) 20 0.5 2.0 "10 1500 Watts Watt Amps Volts Volts Operating Junction Temperature TJ −40...




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