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MAC229A10FP

ON Semiconductor

Triacs

MAC229A8FP, MAC229A10FP Triacs Silicon Bidirectional Thyristors Designed primarily for industrial and consumer applicat...


ON Semiconductor

MAC229A10FP

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MAC229A8FP, MAC229A10FP Triacs Silicon Bidirectional Thyristors Designed primarily for industrial and consumer applications for full wave control of ac loads such as appliance controls, heater controls, motor controls, and other power switching applications. All Diffused and Glass−Passivated Junctions for Parameter Uniformity and Stability Small, Rugged, Thermowatt Construction for Low Thermal Resistance and High Heat Dissipation Center Gate Geometry for Uniform Current Spreading Gate Triggering Guaranteed in Four Modes Indicates UL Registered — File #E69369 Device Marking: Logo, Device Type, e.g., MAC229A8FP, Date Code MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Peak Repetitive Off−State Voltage(1) (TJ = −40 to 110°C, Sine Wave 50 to 60 Hz, Gate Open) MAC229A8FP MAC229A10FP VDRM, VRRM 600 800 Unit Volts On-State RMS Current (TC = 80°C) Full Cycle Sine Wave 50 to 60 Hz IT(RMS) 8.0 Amps Peak Non−Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TJ = 110°C) Circuit Fusing Consideration (t = 8.3 ms) ITSM I2t 80 Amps 26 A2s Peak Gate Current (t p 2 μs,TC = 80°C) Peak Gate Voltage (t p 2 μs, TC = 80°C) Peak Gate Power (t p 2 μs,TC = 80°C) Average Gate Power (TC = 80°C, t p 8.3 ms) RMS Isolation Voltage Relative Humidity p (2T0A%=)25(°C, ) IGM VGM PGM PG(AV) V(ISO) "2.0 "10 20 0.5 1500 Amps Volts Watts Watt Volts Operating Junction Temperature Range TJ −40 to 110 °C Storage Temperature Range Tstg −40 to 15...




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