Document
CPH6429
Ordering number : ENN8081
CPH6429 N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Features
• Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature
Symbol
VDSS VGSS
ID IDP PD Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1200mm2✕0.8mm)
Ratings 60
±10 2 8
1.6 150 --55 to +150
Unit V V A A W °C °C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Marking : ZF
V(BR)DSS IDSS IGSS
VGS(off) yfs
RDS(on)1 RDS(on)2
Ciss
Coss
Crss
td(on) tr
td(off) tf
ID=1mA, VGS=0 VDS=60V, VGS=0 VGS=±8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1A ID=1A, VGS=4V ID=1A, VGS=2.5V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
min 60
0.4 1.8
Ratings typ
max
Unit
V
1 µA
±10 µA
1.3 V
3.6 S
170 220 mΩ
190 270 mΩ
325 pF
29 pF
21 pF
11 ns
17 ns
40 ns
27 ns
Continued on next page.
© 2011, SCILLC. All rights reserved. Jan-2011, Rev. 0
Rev.0 I Pwagwew1.oofn4seImwiw.cwo.omnsemi.com
Publication Order Number: CPH6429/D
CPH6429
Continued from preceding page.
Parameter
Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage
Symbol
Qg Qgs Qgd VSD
Conditions
VDS=30V, VGS=4V, ID=2A VDS=30V, VGS=4V, ID=2A VDS=30V, VGS=4V, ID=2A IS=2A, VGS=0
Ratings min typ max
Unit
4.2 nC
1.1 nC
1.1 nC
0.86
1.2 V
Package Dimensions unit : mm 2151A
2.9 6 54
0.15 0.05
0.2
0.6 1.6 0.6 2.8
12 3 0.95
0.4
0.7 0.2 0.9
1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain
SANYO : CPH6
Switching Time Test Circuit
VIN 4V
0V
VIN
PW=10µs D.C.≤1%
G
VDD=30V
ID=1A RL=30Ω D VOUT
CPH6429 P.G 50Ω S
Drain Current, ID -- A
6.0V 2.0V
5.0V 4.0V
2.5V 3.0V 3.5V
ID -- VDS
2.0 1.8 1.6 1.4 1.2
1.0 VGS=1.5V
0.8 0.6 0.4 0.2
0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS -- V IT06812
RDS(on) -- VGS
500
Ta=25°C ID=1.0A
400
300
200
100
0 0 2 4 6 8 10
Gate-to-Source Voltage, VGS -- V IT06814
Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ
Drain Current, ID -- A
4.0
VDS=10V
3.5
ID -- VGS
3.0
2.5
2.0
1.5
Ta=25°C 75°C
--25°C
1.0
0.5
0 0 0.5 1.0 1.5 2.0 2.5 3.0
Gate-to-Source Voltage, VGS -- V IT06813
RDS(on) -- Ta
400
350
300
250 200 150
I D=I D1A=1, AV,GVS=G2S.=5V4.0V
100
50
0 --60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT06815
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