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CPH6429 Dataheets PDF



Part Number CPH6429
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description N-Channel Silicon MOSFET
Datasheet CPH6429 DatasheetCPH6429 Datasheet (PDF)

CPH6429 Ordering number : ENN8081 CPH6429 N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Electrical Characteristics at Ta=25°C Conditions PW≤10µs, du.

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CPH6429 Ordering number : ENN8081 CPH6429 N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Electrical Characteristics at Ta=25°C Conditions PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1200mm2✕0.8mm) Ratings 60 ±10 2 8 1.6 150 --55 to +150 Unit V V A A W °C °C Parameter Symbol Conditions Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Marking : ZF V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf ID=1mA, VGS=0 VDS=60V, VGS=0 VGS=±8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1A ID=1A, VGS=4V ID=1A, VGS=2.5V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit min 60 0.4 1.8 Ratings typ max Unit V 1 µA ±10 µA 1.3 V 3.6 S 170 220 mΩ 190 270 mΩ 325 pF 29 pF 21 pF 11 ns 17 ns 40 ns 27 ns Continued on next page. © 2011, SCILLC. All rights reserved. Jan-2011, Rev. 0 Rev.0 I Pwagwew1.oofn4seImwiw.cwo.omnsemi.com Publication Order Number: CPH6429/D CPH6429 Continued from preceding page. Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Qg Qgs Qgd VSD Conditions VDS=30V, VGS=4V, ID=2A VDS=30V, VGS=4V, ID=2A VDS=30V, VGS=4V, ID=2A IS=2A, VGS=0 Ratings min typ max Unit 4.2 nC 1.1 nC 1.1 nC 0.86 1.2 V Package Dimensions unit : mm 2151A 2.9 6 54 0.15 0.05 0.2 0.6 1.6 0.6 2.8 12 3 0.95 0.4 0.7 0.2 0.9 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : CPH6 Switching Time Test Circuit VIN 4V 0V VIN PW=10µs D.C.≤1% G VDD=30V ID=1A RL=30Ω D VOUT CPH6429 P.G 50Ω S Drain Current, ID -- A 6.0V 2.0V 5.0V 4.0V 2.5V 3.0V 3.5V ID -- VDS 2.0 1.8 1.6 1.4 1.2 1.0 VGS=1.5V 0.8 0.6 0.4 0.2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Drain-to-Source Voltage, VDS -- V IT06812 RDS(on) -- VGS 500 Ta=25°C ID=1.0A 400 300 200 100 0 0 2 4 6 8 10 Gate-to-Source Voltage, VGS -- V IT06814 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Drain Current, ID -- A 4.0 VDS=10V 3.5 ID -- VGS 3.0 2.5 2.0 1.5 Ta=25°C 75°C --25°C 1.0 0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 Gate-to-Source Voltage, VGS -- V IT06813 RDS(on) -- Ta 400 350 300 250 200 150 I D=I D1A=1, AV,GVS=G2S.=5V4.0V 100 50 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT06815 Rev.0 I Page 2 of 4 I www.onsemi..


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