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NS6A16AFT3G Dataheets PDF



Part Number NS6A16AFT3G
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description 600 Watt Peak Power Zener Transient Voltage Suppressors
Datasheet NS6A16AFT3G DatasheetNS6A16AFT3G Datasheet (PDF)

NS6A5.0AFT3G, SZNS6A5.0AFT3G Series 600 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional The NS6AxxAFT3G series is designed to protect voltage sensitive components from high voltage, high energy transients. This device has excellent clamping capability, high surge capability, low zener impedance and fast response time. The NS6AxxAFT3G series is ideally suited for use in computer hard disk drives, communication systems, automotive, numerical controls, process controls, medical .

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NS6A5.0AFT3G, SZNS6A5.0AFT3G Series 600 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional The NS6AxxAFT3G series is designed to protect voltage sensitive components from high voltage, high energy transients. This device has excellent clamping capability, high surge capability, low zener impedance and fast response time. The NS6AxxAFT3G series is ideally suited for use in computer hard disk drives, communication systems, automotive, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications. Specification Features: • Peak Reverse Working Voltage Range − 5 V to 64 V • Peak Pulse Power of 600 W (10 x 1000 msec) • ESD Rating of Class 3 (>16 kV) per Human Body Model • ESD Rating of Class 4 (>8 kV) IEC 61000−4−2 • Fast Response Time • Low Profile Package • SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are readily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds LEADS: Modified L−Bend providing more contact area to bond pads POLARITY: Cathode indicated by polarity band MOUNTING POSITION: Any http://onsemi.com PLASTIC SURFACE MOUNT ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS Cathode Anode SMA−FL CASE 403AA MARKING DIAGRAM xxx AYWWG xxx = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Device Package Shipping† NS6AxxAFT3G, SMA−FL 5000 / Tape & SZNS6AxxAFT3G (Pb−Free) Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2014 August, 2014 − Rev. 2 1 Publication Order Number: NS6A5.0AF/D NS6A5.0AFT3G, SZNS6A5.0AFT3G Series MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation (Note 1) @ TL = 25°C, Pulse Width = 1 ms PPK 600 W DC Power Dissipation @ TL = 75°C Measured Zero Lead Length (Note 2) Derate Above 75°C Thermal Resistance from Junction−to−Lead PD RqJL 1.5 W 20 mW/°C 50 °C/W DC Power Dissipation (Note 3) @ TA = 25°C Derate Above 25°C Thermal Resistance from Junction−to−Ambient PD RqJA 0.5 W 4.0 mW/°C 250 °C/W Forward Surge Current (Note 4) @ TA = 25°C IFSM 40 A Operating and Storage Temperature Range TJ, Tstg −65 to +150 1. 10 X 1000 ms, non−repetitive. 2. 1 in square copper pad, FR−4 board. 3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403AA case outline dimensions spec. 4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum. °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 3.5 V Max. @ IF (Note 5) = 30 A) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT Test Current IF Forward Current VF Forward Voltage @ IF 5. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, non−repetitive duty cycle. I IF VC VBR VRWM IIRT VF V IPP Uni−Directional TVS http://onsemi.com 2 NS6A5.0AFT3G, SZNS6A5.0AFT3G Series ELECTRICAL CHARACTERISTICS Device* Device Marking VRWM (Note 6) V IR @ VRWM mA Breakdown Voltage VBR (Note 7) Volts Min Nom Max @ IT mA VC @ IPP (Note 8) VC IPP VA Ctyp (Note 9) pF NS6A5.0AFT3G 6AA 5 800 6.4 6.70 7 10 9.2 65.2 2700 NS6A6.0AFT3G 6AB 6 800 6.67 7.02 7.37 10 10.3 58.3 2300 NS6A6.5AFT3G 6AC 6.5 500 7.22 7.60 7.98 10 11.2 53.6 2140 NS6A7.0AFT3G 6AD 7 500 7.78 8.19 8.6 10 12 50 2005 NS6A7.5AFT3G 6AE 7.5 100 8.33 8.77 9.21 1 12.9 46.5 1890 NS6A8.0AFT3G 6AF 8 50 8.89 9.36 9.83 1 13.6 44.1 1780 NS6A8.5AFT3G 6AG 8.5 10 9.44 9.92 10.4 1 14.4 41.7 1690 NS6A9.0AFT3G 6AH 9 5 10 10.55 11.1 1 15.4 39 1605 NS6A10AFT3G 6AI 10 5 11.1 11.70 12.3 1 17 35.3 1460 NS6A11AFT3G 6AL 11 5 12.2 12.85 13.5 1 18.2 33 1345 NS6A12AFT3G 6AJ 12 5 13.3 14.00 14.7 1 19.9 30.2 1245 NS6A13AFT3G 6AK 13 5 14.4 15.15 15.9 1 21.5 27.9 1160 NS6A14AFT3G 6AM 14 5 15.6 16.40 17.2 1 23.2 25.8 1085 NS6A15AFT3G 6AN 15 5 16.7 17.60 18.5 1 24.4 24 1020 NS6A16AFT3G 6AO 16 5 17.8 18.75 19.7 1 26 23.1 965 NS6A17AFT3G 6AP 17 5 18.9 19.90 20.9 1 27.6 21.7 915 NS6A18AFT3G 6AQ 18 5 20 21.05 22.1 1 29.2 20.5 870 NS6A20AFT3G 6AR 20 5 22.2 23.35 24.5 1 32.4 18.5 790 NS6A22AFT3G 6AS 22 5 24.4 25.65 26.9 1 35.5 16.9 730 NS6A24AFT3G 6AT 24 5 26.7 28.10 29.5 1 38.9 15.4 675 NS6A26AFT3G 6AU 26 5 28.9 30.40 31.9 1 42.1 14.2 630 NS6A28AFT3G 6AV 28 5 31.1 32.75 34.4 .


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