KTC9013

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Excellent hFE Linearity. Complementary to KTC9012. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC IE PC Tj Storage Temperature Range Tstg RATING 40 30 5 500 -500 625 150 -55 150 UNIT V V V mA mA mW L M C KTC9013 EPITAXIAL PLANAR NPN TRANSISTOR BC JA KE G D H FF 123 N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00 1. EMITTER 2. BASE 3. COLLECTOR TO-92 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency ICBO IEBO hFE (Note) VCE(sat) VBE fT VCB=35V, IE=0 VEB=5V, IC=0 VCE=1V, IC=50mA IC=100mA, IB=10mA IC=100mA, VCE=1V VCB=6V, IC=20mA, f=100MHz 64 - 140 Collector Output Capacitance Cob VCB=6V, IE=0, f=1MHz - Note : hFE Classification D:64 91, E:78 112, F:96 135, G:118 166, H:144 202, I:176 246 TYP. 0.1 0.8 7.0 MAX. 0.1 0.1 246 0.25 1.0 - UNIT A A V V MHz pF 2011. 4. 4 Revision No : 3 1/1 KTC9013 COLLECTOR CURRENT IC (mA) IC - VCE (LOW VOLTAGE REGION) 500 COMMON EMITTER Ta=25 C 400 6.0 4.0 3.0 300 2.0 200 1.0 100 0.5 I B =0.1mA 0...