HN4B102J

HN4B102J TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) HN4B102J MOS Gate Drive Applications Switching Applications Small footprint due to a small and thin package High DC current gain : PNP hFE = 200 to 500 (IC =－0.2 A) : NPN hFE = 200 to 500 (IC = 0.2 A) Low collector-emitter saturation : PNP VCE (sat) =－0.20 V (max) : NPN VCE (sat) = 0.14 V (max) High-speed switching : PNP tf = 40 ns (typ.) : NPN tf = 45 ns (typ.) 2.9±0.2 1.9±0.2 0.95 0.95 　　+0.2 2.8 -0.3 　　+0.2 1.6 -0.1 Unit: mm 0.4±0.1 15 2 4 3 　　　+0.1 0.16 -0.06 　　+0.2 1.1 -0.1 Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC (Note 1) Pulse (Note 1) Base current Collector power Single-device dissipation (t = 10 s) operation Collector power dissipation (DC) Single-device operation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC ICP IB Rating PNP NPN −30 −30 −7 −1.8 −8.0 60 30 7 2.0 8.0 −0.5 0.5 PC (Note 2) 1.1 PC (Note 2) Tj Tstg 0.75 150 −55 to 150 Unit V V V A A W W °C °C 1. Base (Q1 PNP) 2. Emitter (Q1 PNP/Q2 NPN) 3. Base (Q2 NPN) 4. Collector (Q2 NPN) 5. Collector (Q1 PNP) JEDEC ― JEITA ― TOSHIBA 2-3L1A Weight: 0.014g (typ.) 0~0.1 Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device. Note 2: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm2) Note 3: Using continuousl...