Document
Silicon Standard Recovery Diode
Features • High Surge Capability • Types from 50 to 300 V VRRM • Not ESD Sensitive
Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base.
1N1183 thru 1N1187R
VRRM = 50 V - 300 V IF = 35 A
DO-5 Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
1N1183 (R) 1N1184 (R) 1N1186 (R) 1N1187 (R)
Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current
Surge non-repetitive forward current, Half Sine Wave
Operating temperature Storage temperature
VRRM VRMS VDC
IF
IF,SM
Tj Tstg
TC ≤ 140 °C TC = 25 °C, tp = 8.3 ms
50 100 200 35 70 140 50 100 200 35 35 35
595 595 595
-55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150
300 210 300 35
595
-55 to 150 -55 to 150
Unit
V V V A
A
°C °C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
1N1183 (R) 1N1184 (R) 1N1186 (R) 1N1187 (R) Unit
Diode forward voltage
VF IF = 35 A, Tj = 25 °C 1.2 1.2 1.2 1.2 V
Reverse current
IR
VR = 50 V, Tj = 25 °C VR = 50 V, Tj = 140 °C
10 10
10 10
10 10
10 μA 10 mA
Thermal characteristics
Thermal resistance, junction case
RthJC
0.25 0.25 0.25 0.25 °C/W
www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
1
1N1183 thru 1N1187R
www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
2
1N1183 thru 1N1187R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration. M DO- 5 (DO-203AB)
J K
P D
G
FE
C
A
B N
Inches
Millimeters
Min A B 0.669 C ----D ----E 0.422 F 0.115 G ----J ----K 0.236 M ----N ----P 0.140
Max Min
1/4 –28 UNF
0.687
17.19
0.794
-----
1.020
-----
0.453
10.72
0.200
2.93
0.460
-----
0.280
-----
----- 6.00
0.589
-----
0.063
-----
0.175
3.56
Max
17.44 20.16 25.91 11.50 5.08 11.68 7.00 ----14.96 1.60 4.45
www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
3
.