Silicon Standard Recovery Diode
Silicon Standard Recovery Diode
Features • High Surge Capability • Types from 700 V to 1000 V VRRM • Not ESD Sensitive
N...
Description
Silicon Standard Recovery Diode
Features High Surge Capability Types from 700 V to 1000 V VRRM Not ESD Sensitive
Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base.
1N3765 thru 1N3768R
VRRM = 700 V - 1000 V IF = 35 A
DO-5 Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
1N3765 (R) 1N3766 (R) 1N3767 (R) 1N3768 (R)
Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current
Surge non-repetitive forward current, Half Sine Wave
Operating temperature Storage temperature
VRRM VRMS VDC
IF
IF,SM
Tj Tstg
TC ≤ 140 °C TC = 25 °C, tp = 8.3 ms
700 800 900 490 560 630 700 800 900 35 35 35
475 475 475
-55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150
1000 700 1000 35
475
-55 to 150 -55 to 150
Unit
V V V A
A
°C °C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
1N3765 (R) 1N3766 (R) 1N3767 (R) 1N3768 (R) Unit
Diode forward voltage
VF IF = 35 A, Tj = 25 °C 1.2 1.2 1.2 1.2 V
Reverse current
IR
VR = 50 V, Tj = 25 °C VR = 50 V, Tj = 140 °C
10 10
10 10
10 10
10 μA 10 mA
Thermal characteristics
Thermal resistance, junction case
RthJC
0.25 0.25 0.25 0.25 °C/W
www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
1
1N3765 thru 1N3768R
www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
2
1N3765 thru 1N3768R
Package dimensions and te...
Similar Datasheet