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1N3766 Dataheets PDF



Part Number 1N3766
Manufacturers GeneSiC
Logo GeneSiC
Description Silicon Standard Recovery Diode
Datasheet 1N3766 Datasheet1N3766 Datasheet (PDF)

Silicon Standard Recovery Diode Features • High Surge Capability • Types from 700 V to 1000 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N3765 thru 1N3768R VRRM = 700 V - 1000 V IF = 35 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N3765 (R) 1N3766 (R) 1N3767 (R) 1N3768 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Cont.

  1N3766   1N3766


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Silicon Standard Recovery Diode Features • High Surge Capability • Types from 700 V to 1000 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N3765 thru 1N3768R VRRM = 700 V - 1000 V IF = 35 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N3765 (R) 1N3766 (R) 1N3767 (R) 1N3768 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 140 °C TC = 25 °C, tp = 8.3 ms 700 800 900 490 560 630 700 800 900 35 35 35 475 475 475 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 1000 700 1000 35 475 -55 to 150 -55 to 150 Unit V V V A A °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N3765 (R) 1N3766 (R) 1N3767 (R) 1N3768 (R) Unit Diode forward voltage VF IF = 35 A, Tj = 25 °C 1.2 1.2 1.2 1.2 V Reverse current IR VR = 50 V, Tj = 25 °C VR = 50 V, Tj = 140 °C 10 10 10 10 10 10 10 μA 10 mA Thermal characteristics Thermal resistance, junction case RthJC 0.25 0.25 0.25 0.25 °C/W www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 1 1N3765 thru 1N3768R www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 2 1N3765 thru 1N3768R Package dimensions and terminal configuration Product is marked with part number and terminal configuration. M DO- 5 (DO-203AB) J K P D G FE C A B N Inches Millimeters Min A B 0.669 C ----D ----E 0.422 F 0.115 G ----J ----K 0.236 M ----N ----P 0.140 Max Min 1/4 –28 UNF 0.687 17.19 0.794 ----- 1.020 ----- 0.453 10.72 0.200 2.93 0.460 ----- 0.280 ----- ----- 6.00 0.589 ----- 0.063 ----- 0.175 3.56 Max 17.44 20.16 25.91 11.50 5.08 11.68 7.00 ----14.96 1.60 4.45 www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 3 .


1N3765 1N3766 1N3767


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