1N3768R

Silicon Standard Recovery Diode Features High Surge Capability Types from 700 V to 1000 V VRRM Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N3765 thru 1N3768R VRRM = 700 V - 1000 V IF = 35 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N3765 (R) 1N3766 (R) 1N3767 (R) 1N3768 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 140 °C TC = 25 °C, tp = 8.3 ms 700 800 900 490 560 630 700 800 900 35 35 35 475 475 475 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 1000 700 1000 35 475 -55 to 150 -55 to 150 Unit V V V A A °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N3765 (R) 1N3766 (R) 1N3767 (R) 1N3768 (R) Unit Diode forward voltage VF IF = 35 A, Tj = 25 °C 1.2 1.2 1.2 1.2 V Reverse current IR VR = 50 V, Tj = 25 °C VR = 50 V, Tj = 140 °C 10 10 10 10 10 10 10 μA 10 mA Thermal characteristics Thermal resistance, junction case RthJC 0.25 0.25 0.25 0.25 °C/W www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 1 1N3765 thru 1N3768R www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 2 1N3765 thru 1N3768R Package dimensions and te...