BUK625R2-30C

DPAK BUK625R2-30C N-channel TrenchMOS intermediate level FET Rev. 1 — 12 July 2011 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits  AEC Q101 compliant  Suitable for standard and logic level gate drive sources  Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications  12 V Automotive systems  Electric and electro-hydraulic power steering  Motors, lamps and solenoid control  Start-Stop micro-hybrid applications  Transmission control  Ultra high performance power switching 1.4 Quick reference data Table 1. Symbol VDS ID Quick reference data Parameter drain-source voltage drain current Ptot total power dissipation Static characteristics RDSon drain-source on-state resistance Conditions Min Typ Max Unit Tj ≥ 25 °C; Tj ≤ 175 °C - - 30 V VGS = 10 V; Tmb = 25 °C; [1] - - 90 A see Figure 1 Tmb = 25 °C; see Figure 2 - - 128 W VGS = 10 V; ID = 15 A; - 4.4 5.2 mΩ Tj = 25 °C; see Figure 11 NXP Semiconductors BUK625R2-30C N-channel TrenchMOS intermediate level FET Table 1. Quick reference data …continued Symbol Parameter Conditions Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy ...