D2PAK
BUK661R8-30C
N-channel TrenchMOS intermediate level FET
Rev. 2.1 — 18 August 2011
Product data sheet
1. Produ...
D2PAK
BUK661R8-30C
N-channel TrenchMOS intermediate level FET
Rev. 2.1 — 18 August 2011
Product data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.
1.2 Features and benefits
AEC Q101 compliant Suitable for standard and logic level
gate drive sources
Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
12 V Automotive systems Electric and electro-hydraulic power
steering Motors, lamps and solenoid control
Start-Stop micro-hybrid applications Transmission control Ultra high performance power
switching
1.4 Quick reference data
Table 1. Symbol VDS ID
Quick reference data Parameter drain-source voltage drain current
Ptot total power dissipation
Static characteristics
RDSon
drain-source on-state resistance
Conditions
Min Typ Max Unit
Tj ≥ 25 °C; Tj ≤ 175 °C
- - 30 V
VGS = 10 V; Tmb = 25 °C; [1] - - 120 A see Figure 1
Tmb = 25 °C; see Figure 2 - - 263 W
VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11
- 1.6 1.9 mΩ
NXP Semiconductors
BUK661R8-30C
N-channel TrenchMOS intermediate level FET
Table 1. Quick reference data …continued
Symbol Parameter
Conditions
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source avalanche ener...