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BUK661R8-30C Dataheets PDF



Part Number BUK661R8-30C
Manufacturers NXP
Logo NXP
Description N-channel TrenchMOS intermediate level FET
Datasheet BUK661R8-30C DatasheetBUK661R8-30C Datasheet (PDF)

D2PAK BUK661R8-30C N-channel TrenchMOS intermediate level FET Rev. 2.1 — 18 August 2011 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits  AEC Q101 compliant  Suitable for s.

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D2PAK BUK661R8-30C N-channel TrenchMOS intermediate level FET Rev. 2.1 — 18 August 2011 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits  AEC Q101 compliant  Suitable for standard and logic level gate drive sources  Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications  12 V Automotive systems  Electric and electro-hydraulic power steering  Motors, lamps and solenoid control  Start-Stop micro-hybrid applications  Transmission control  Ultra high performance power switching 1.4 Quick reference data Table 1. Symbol VDS ID Quick reference data Parameter drain-source voltage drain current Ptot total power dissipation Static characteristics RDSon drain-source on-state resistance Conditions Min Typ Max Unit Tj ≥ 25 °C; Tj ≤ 175 °C - - 30 V VGS = 10 V; Tmb = 25 °C; [1] - - 120 A see Figure 1 Tmb = 25 °C; see Figure 2 - - 263 W VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11 - 1.6 1.9 mΩ NXP Semiconductors BUK661R8-30C N-channel TrenchMOS intermediate level FET Table 1. Quick reference data …continued Symbol Parameter Conditions Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Dynamic characteristics ID = 120 A; Vsup ≤ 30 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped QGD gate-drain charge ID = 25 A; VDS = 24 V; VGS = 10 V; see Figure 13; see Figure 14 [1] Continuous current is limited by package. 2. Pinning information Min Typ Max Unit - - 0.87 J - 45 - nC Table 2. Pin 1 2 3 mb Pinning information Symbol Description G gate D drain S source D mounting base; connected to drain Simplified outline mb 2 13 SOT404 (D2PAK) 3. Ordering information Graphic symbol D G mbb076 S Table 3. Ordering information Type number Package Name BUK661R8-30C D2PAK Description Version plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404 (one lead cropped) BUK661R8-30C Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 18 August 2011 © NXP B.V. 2011. All rights reserved. 2 of 14 NXP Semiconductors BUK661R8-30C N-channel TrenchMOS intermediate level FET 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS Parameter drain-source voltage gate-source voltage Conditions Tj ≥ 25 °C; Tj ≤ 175 °C DC Pulsed ID drain current IDM peak drain current Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 100 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3 Ptot total power dissipation Tstg storage temperature Tj junction temperature Source-drain diode Tmb = 25 °C; see Figure 2 IS source current ISM peak source current Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy EDS(AL)R repetitive drain-source avalanche energy Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C ID = 120 A; Vsup ≤ 30 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped Min [1] -16 [2] -20 [3] [3] - -55 -55 [3] - - [4][5][6] - [1] -16V accumulated duration not to exceed 168 hrs. [2] Accumulated pulse duration not to exceed 5mins. [3] Continuous current is limited by package. [4] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. [5] Repetitive avalanche rating limited by an average junction temperature of 170 °C. [6] Refer to application note AN10273 for further information. Max 30 16 20 120 120 1080 Unit V V V A A A 263 W 175 °C 175 °C 120 A 1080 A 0.87 J -J BUK661R8-30C Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 18 August 2011 © NXP B.V. 2011. All rights reserved. 3 of 14 NXP Semiconductors 300 ID (A) 250 200 150 100 50 0 0 003aae366 (1) 50 100 150 Tmb(°C)200 BUK661R8-30C N-channel TrenchMOS intermediate level FET 120 Pder (%) 80 03na19 40 0 0 50 100 150 200 Tmb (°C) Fig 1. Continuous drain current as a function of mounting base temperature 104 ID (A) 103 Limit RDSon = VDS/ ID 102 10 1 10-1 1 Fig 2. Normalized total power dissipation as a function of mounting base temperature 003aae367 DC 10 tp =10 μ s 100 μ s 10 ms 100 ms V DS(V) 102 Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK661R8-30C Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 18 August 2011 © NXP B.V. 2011. All rights reserved. 4 of 14 NXP Semiconductors BUK661R8-30C N-channel TrenchMOS intermediate level FET 5. Thermal characteristics Table 5. Symbol Rth(j-mb) Thermal characteristics Parameter thermal resistance from junction to mounting base Cond.


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