Silicon Fast Recovery Diode
Silicon Fast Recovery Diode
Features • High Surge Capability • Types from 100 V to 600 V VRRM • Not ESD Sensitive
Note: ...
Description
Silicon Fast Recovery Diode
Features High Surge Capability Types from 100 V to 600 V VRRM Not ESD Sensitive
Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base.
FR85B02 thru FR85JR02
VRRM = 100 V - 600 V IF = 85 A
DO-5 Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
FR85B(R)02 FR85D(R)02 FR85G(R)02
Repetitive peak reverse voltage RMS reverse voltage
DC blocking voltage
VRRM
VRMS VDC
100 200 400
70 140 280 100 200 400
Continuous forward current
IF
TC ≤ 100 °C
85
85
85
FR85J(R)02 Unit
600 V 420 V 600 V 85 A
Surge non-repetitive forward current, Half Sine Wave
Operating temperature Storage temperature
IF,SM TC = 25 °C, tp = 8.3 ms
Tj Tstg
1369
-55 to 150 -55 to 150
1369
-55 to 150 -55 to 150
1369
-55 to 150 -55 to 150
1369
-55 to 150 -55 to 150
A
°C °C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
FR85B(R)02 FR85D(R)02
Diode forward voltage
Reverse current
Recovery Time Maximum reverse recovery time
VF IF = 85 A, Tj = 25 °C
IR
VR = 100 V, Tj = 25 °C VR = 100 V, Tj = 125 °C
TRR
IF=0.5 A, IR=1.0 A, IRR= 0.25 A
1.3 25 20
200
1.3 25 20
200
FR85G(R)02 1.3 25 20
200
FR85J(R)02
1.3 25 20
Unit
V μA mA
250 nS
www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/
1
FR85B02 thru FR85JR02
www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/
2
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