Silicon Fast Recovery Diode
Silicon Fast Recovery Diode
Features • High Surge Capability • Types from 600 V to 1000 V VRRM • Not ESD Sensitive
Note:...
Description
Silicon Fast Recovery Diode
Features High Surge Capability Types from 600 V to 1000 V VRRM Not ESD Sensitive
Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base.
FR6J05 thru FR6MR05
VRRM = 600 V - 1000 V IF = 6 A
DO-4 Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
FR6J(R)05
FR6K(R)05
FR6M(R)05
Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage
Continuous forward current
VRRM
VRMS VDC
IF
TC ≤ 100 °C
600
420 600
6
800 1000
560 700 800 1000
66
Surge non-repetitive forward current, Half Sine Wave
IF,SM TC = 25 °C, tp = 8.3 ms
135
135
135
Operating temperature Storage temperature
Tj Tstg
-55 to 150 -55 to 150
-55 to 150 -55 to 150
-55 to 150 -55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
FR6J(R)05
Diode forward voltage
Reverse current
Recovery Time Maximum reverse recovery time Thermal characteristics Thermal resistance, junction - case
VF IF = 6 A, Tj = 25 °C
IR
VR = 50 V, Tj = 25 °C VR = 50 V, Tj = 150 °C
TRR
IF=0.5 A, IR=1.0 A, IRR= 0.25 A
RthJC
1.4 25 6
500
2.5
FR6K(R)05 1.4 25 6
500
2.5
FR6M(R)05 1.4 25 6
500
2.5
Unit V V V A
A °C °C
Unit V μA mA
nS
°C/W
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1
FR6J05 thru FR6MR05
www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/
2
FR6J05 thru FR...
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