PTVA047002EV

PTVA047002EV Thermally-Enhanced High Power RF LDMOS FET 700 W, 50 V, 470 – 806 MHz Description The PTVA047002EV LDMOS FET is designed for use in power amplifier applications in the 470 MHz to 806 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA047002EV Package H-36275-4 Drain Efficiency (%), Gain (dB) DVB-T Performance Drain Efficiency, Gain vs Frequency VDD= 50 V, IDQ = 1.2 A, POUT = 135 W avg 34 30 Drain Efficiency 26 22 18 Gain 14 ptva047002ev_g5 450 500 550 600 650 700 750 800 850 Frequency (MHz) Features Input matched Integrated ESD protection Low thermal resistance High gain Thermally enhanced package RoHS compliant Capable of withstanding a 10:1 VSWR at 130 W average power under DVB-T signal condition Human Body Model Class 2 (per ANSI/ESDA/ JEDEC JS-001) RF Characteristics DVB-T (8K OFDM, 64QAM) Characteristics (tested in Infineon test fixture, narrowband 806 MHz) VDD = 50 V, IDQ = 1200 mA, ƒ = 806 MHz, input PAR = 10.5 dB (unclipped), output PAR = 7.8 dB @ 0.01% CCDF probability Characteristic Symbol Min Typ Max Unit Average Output Power Gain Drain Efficiency Adjacent Channel Power Ratio POUT Gps hD ACPR — 16.5 24 — 130 17.5 29 –29.5 — — — –25 W dB % dBc (ACPR integrated over 200 KHz BW at + 4.3 MHz offs...