Thermally-Enhanced High Power RF LDMOS FET
PXAC182908FV
Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 1805 – 1880 MHz
Description
The PXAC182908FV is a...
Description
PXAC182908FV
Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 1805 – 1880 MHz
Description
The PXAC182908FV is a 240-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include dual-path design, input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PXAC182908FV Package H-37275G-6/2
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 600 mA, ƒ = 1880 MHz,
3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW
24 60
Efficiency
20 40
16 20
Gain
12 0
8 PAR @ 0.01% CCDF 4
-20 -40
0 25
pxac182908fc_g1
-60
30 35 40 45 50 55
Average Output Power (dBm)
Features
Broadband internal input and output matching
Asymmetrical Doherty design - Main : P1dB = 120 W Typ - Peak : P1dB = 220 W Typ
Typical Pulsed CW performance, 1842.5 MHz, 28 V, combined outputs - Output power at P1dB = 240 W - Efficiency = 52.6% - Gain = 14.5 dB
Capable of handling 10:1 VSWR @28 V, 240 W (CW) output power
Human Body Model Class 2 (per ANSI/ESDA/ JEDEC JS-001)
Integrated ESD protection
Low thermal resistance
Pb-free and RoHS compliant
RF Characteristics
Single-carrier WCDMA Specifications (tested in Infineon Doherty test fixture) VDD = 28 V, IDQ = 600 mA, VGSPEAK ...
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