SQ4850EY

www.vishay.com SQ4850EY Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.5 V ID (A) Configuration Package 60 0.022 0.031 12 Single SO-8 FEATURES TrenchFET® power MOSFET 100 % Rg and UIS tested AEC-Q101 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 SO-8 Single D D5 D6 D7 8 D G 4 3G 2S 1S S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) Pulsed Drain Current a Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range TC = 25 °C TC = 125 °C L = 0.1 mH TC = 25 °C TC = 125 °C VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT 60 ± 20 12 6.9 6.2 48 23 26 6.8 2.2 -55 to +175 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. When mounted on 1" square PCB (FR4 material). PCB Mount b SYMBOL RthJA RthJF LIMIT 85 22 UNIT V A mJ W °C UNIT °C/W S15-1878-Rev. F, 17-Aug-15 1 Document Number: 68878 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCL...