SQ4937EY

www.vishay.com SQ4937EY Vishay Siliconix Automotive Dual P-Channel 30 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = - 10 V RDS(on) () at VGS = - 4.5 V ID (A) per leg Configuration - 30 0.075 0.145 -5 Dual S1 1 G1 2 S2 3 G2 4 SO-8 Top View 8 D1 7 D1 G1 6 D2 5 D2 S1 G2 S2 D1 D2 P-Channel MOSFET P-Channel MOSFET FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg and UIS Tested AEC-Q101 Qualifiedc Compliant to RoHS Directive 2002/95/EC ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free SO-8 SQ4937EY-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 125 °C ID Continuous Source Current (Diode Conduction) Pulsed Drain Currenta IS IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipationa TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Range TJ, Tstg LIMIT - 30 ± 20 -5 -3 -3 - 20 - 10 5 3.3 1.1 - 55 to + 175 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. When mounted on 1" square PCB (FR-4 material). c. Parametric verification ongoing. PCB Mountb SYMBOL RthJA RthJF LIMIT 110 45 UNIT V A mJ W °C UNIT °C/W S11-2113-Rev. B, 07-Nov-11 1 Document Number: 67043 THIS DOCUM...