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SQD10N30-330H Dataheets PDF



Part Number SQD10N30-330H
Manufacturers Vishay
Logo Vishay
Description Automotive N-Channel MOSFET
Datasheet SQD10N30-330H DatasheetSQD10N30-330H Datasheet (PDF)

www.vishay.com SQD10N30-330H Vishay Siliconix Automotive N-Channel 300 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V ID (A) Configuration TO-252 300 0.330 10 Single D FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • AEC-Q101 qualified d • 100 % Rg tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Drain connected to tab G S D G Top View ORDERING INFORMATION Package Lead (Pb)-free and Halo.

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www.vishay.com SQD10N30-330H Vishay Siliconix Automotive N-Channel 300 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V ID (A) Configuration TO-252 300 0.330 10 Single D FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • AEC-Q101 qualified d • 100 % Rg tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Drain connected to tab G S D G Top View ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free S N-Channel MOSFET TO-252 SQD10N30-330H-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current e Single Pulse Avalanche Energy e Maximum Power Dissipation b Operating Junction and Storage Temperature Range TC = 25 °C TC = 125 °C L = 0.05 mH TC = 25 °C TC = 125 °C VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT 300 ± 30 10 5 50 16 12.65 4 107 35 -55 to +175 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing. e. 1.5 kΩ resistance in series with the gate. PCB Mount c SYMBOL RthJA RthJC LIMIT 50 1.4 UNIT °C/W S15-1136-Rev. C, 12-May-15 1 Document Number: 67070 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com SQD10N30-330H Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic b VDS VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 μA VDS = VGS, ID = 250 μA VDS = 0 V, VGS = ± 30 V VGS = 0 V VGS = 0 V VGS = 0 V VDS = 300 V VDS = 300 V, TJ = 125 °C VDS = 300 V, TJ = 175 °C VGS = 10 V VDS ≥ 5 V VGS = 10 V VGS = 10 V VGS = 10 V ID = 14 A ID = 14 A, TJ = 125 °C ID = 14 A, TJ = 175 °C VDS = 15 V, ID = 14 A Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge c Qg Gate-Source Charge c Qgs Gate-Drain Charge c Qgd Gate Resistance Rg Turn-On Delay Time c td(on) Rise Time c tr Turn-Off Delay Time c td(off) Fall Time c tf Source-Drain Diode Ratings and Characteristics b VGS = 0 V VDS = 25 V, f = 1 MHz VGS = 10 V VDS = 150 V, ID = 7 A f = 1 MHz VDD = 150 V, RL = 21 Ω ID ≅ 7 A, VGEN = 10 V, Rg = 1 Ω Pulsed Current a Forward Voltage ISM VSD IF = 25 A, VGS = 0 V Notes a. Pulse test; pulse wi.



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