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SQD10N30-330H
Vishay Siliconix
Automotive N-Channel 300 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) at VGS = 10 V ID (A) Configuration
TO-252
300 0.330
10 Single
D
FEATURES • TrenchFET® power MOSFET
• Package with low thermal resistance • AEC-Q101 qualified d
• 100 % Rg tested • Material categorization:
for definitions of compliance please see www.vishay.com/doc?99912
Drain connected to tab
G
S D G Top View
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
S N-Channel MOSFET
TO-252 SQD10N30-330H-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current e Single Pulse Avalanche Energy e
Maximum Power Dissipation b
Operating Junction and Storage Temperature Range
TC = 25 °C TC = 125 °C
L = 0.05 mH TC = 25 °C TC = 125 °C
VGS
ID
IS IDM IAS EAS
PD
TJ, Tstg
LIMIT 300 ± 30 10 5 50 16 12.65 4 107 35
-55 to +175
UNIT V
A
mJ W °C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing. e. 1.5 kΩ resistance in series with the gate.
PCB Mount c
SYMBOL RthJA RthJC
LIMIT 50 1.4
UNIT °C/W
S15-1136-Rev. C, 12-May-15
1
Document Number: 67070
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
SQD10N30-330H
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance b Dynamic b
VDS VGS(th) IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 250 μA
VDS = 0 V, VGS = ± 30 V
VGS = 0 V VGS = 0 V VGS = 0 V
VDS = 300 V VDS = 300 V, TJ = 125 °C VDS = 300 V, TJ = 175 °C
VGS = 10 V
VDS ≥ 5 V
VGS = 10 V VGS = 10 V VGS = 10 V
ID = 14 A ID = 14 A, TJ = 125 °C ID = 14 A, TJ = 175 °C
VDS = 15 V, ID = 14 A
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge c
Qg
Gate-Source Charge c
Qgs
Gate-Drain Charge c
Qgd
Gate Resistance
Rg
Turn-On Delay Time c
td(on)
Rise Time c
tr
Turn-Off Delay Time c
td(off)
Fall Time c
tf
Source-Drain Diode Ratings and Characteristics b
VGS = 0 V
VDS = 25 V, f = 1 MHz
VGS = 10 V
VDS = 150 V, ID = 7 A
f = 1 MHz
VDD = 150 V, RL = 21 Ω ID ≅ 7 A, VGEN = 10 V, Rg = 1 Ω
Pulsed Current a Forward Voltage
ISM VSD IF = 25 A, VGS = 0 V
Notes
a. Pulse test; pulse wi.