SQD25N15-52

www.vishay.com SQD25N15-52 Vishay Siliconix Automotive N-Channel 150 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V ID (A) Configuration TO-252 150 0.052 25 Single D FEATURES TrenchFET® Power MOSFET Package with Low Thermal Resistance 100 % Rg and UIS Tested AEC-Q101 Qualified Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 GDS Top View Drain Connected to Tab ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free G S N-Channel MOSFET TO-252 SQD25N15-52-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 125 °C ID Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb IS IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipationb TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Range TJ, Tstg LIMIT 150 ± 20 25 16 50 63 30 45 107 35 - 55 to + 175 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) Notes a. Package limited. b. Pulse test; pulse width  300 μs, duty cycle  2 %. c. When mounted on 1" square PCB (FR-4 material). PCB Mountc SYMBOL RthJA RthJC LIMIT 50 1.4 UNIT V A mJ W °C UNIT °C/W S12-2006-Rev. F, 20-Aug-12 1 Document Number: 68604 For technical questions, contact: [email protected] THIS DOCUMENT I...