Power MOSFET
AUTOMOTIVE GRADE
Features
l Advanced Process Technology l Low On-Resistance l 175°C Operating Temperature l Fast Switch...
Description
AUTOMOTIVE GRADE
Features
l Advanced Process Technology l Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified *
G
PD - 96380
AUIRF2903ZS AUIRF2903ZL
HEXFET® Power MOSFET
D V(BR)DSS
30V
RDS(on) typ.
1.9mΩ
max. 2.4mΩ
kS ID (Silicon Limited) 235A
ID (Package Limited) 160A
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
D
S GD D2Pak AUIRF2903ZS
D
S D G TO-262 AUIRF2903ZL
G Gate
D Drain
S Source
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient
temperature (TA) is 25°C, ...
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