Power MOSFET
AUTOMOTIVE GRADE
AUIRFN7107
Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating T...
Description
AUTOMOTIVE GRADE
AUIRFN7107
Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon are. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this product an extremely efficient and reliable device for use in Automotive and wide variety of other applications.
Applications Injection Heavy Loads DC-DC Converter
HEXFET® POWER MOSFET
VDSS RDS(on) max (@VGS = 10V)
QG (typical)
ID (@TC (Bottom) = 25°C)
75V 8.5m 51nC
75A
G Gate
D Drain
PQFN 5X6 mm
S Source
Base Part Number
Package Type
Standard Pack
Form
Quantity
Complete Part Number
AUIRFN7107
PQFN 5mm x 6mm
Tape and Reel
4000
AUIRFN7107TR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and...
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