AUIRFN8403

AUTOMOTIVE GRADE Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this product an extremely efficient and reliable device for use in Automotive and wide variety of other applications. Applications  Electric Power Steering (EPS)  Battery Switch  Start/Stop Micro Hybrid  Heavy Loads  DC-DC Converter VDSS RDS(on) typ. max ID (Silicon Limited) ID (Package Limited) G Gate AUIRFN8403 HEXFET® POWER MOSFET 40V 2.5m 3.3m 123A 95A D Drain PQFN 5X6 mm S Source Base Part Number AUIRFN8403 Package Type PQFN 5mm x 6mm Standard Pack Form Tape and Reel Quantity 4000 Orderable Part Number AUIRFN8403TR Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended period...