PD - 95637A
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Standard: Optimized for minimum saturation voltage and low ope...
PD - 95637A
INSULATED GATE BIPOLAR
TRANSISTOR
Features
Standard: Optimized for minimum saturation voltage and low operating freqencies (<1 kHz)
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation
Industry standard TO-220 Full-Pak Lead-Free
IRG4IBC30SPbF
C
G E
N-channel
VCES = 600V VCE(on) typ. = 1.4V
@VGE = 15V, IC = 18A
Benefits
Generation 4 IGBTs offer highest efficiencies available IGBTs optimized for specific application conditions Designed to be a "drop-in" replacement for equivalent
industry -standard Generation 3 IR IGBTs
Absolute Maximum Ratings
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG
Parameter Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC RθJA Wt
Parameter Junction-to-Case Junction-to-Ambient, typical socket mount Weight
www.irf.com
TO-220 Full-Pak
Max. 600 23.5 13.0 47 47 ± 20 10 45 18 -55 to + 150
300 (0.063 in. (1.6mm) from case)
Units V A
V mJ W
°C
Typ. ––– ––– 2.1 (0.075)
Max. 2.8 65 –––
Units °C/W g (oz)
1
06/17/2010
IRG4IBC30SPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise spec...
