PD - 94924
IRG4PC30WPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
Designed expressly for Switch-Mode Power Supply a...
PD - 94924
IRG4PC30WPbF
INSULATED GATE BIPOLAR
TRANSISTOR
Features
Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications
Industry-benchmark switching losses improve efficiency of all power supply topologies
50% reduction of Eoff parameter Low IGBT conduction losses Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability Lead-Free
C
G E
n-channel
Benefits
VCES = 600V VCE(on) max. = 2.70V
@VGE = 15V, IC = 12A
Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz ("hard switched" mode)
Of particular benefit to single-ended converters and boost PFC topologies 150W and higher
Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300 kHz)
Absolute Maximum Ratings
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG
Parameter Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.
TO-247AC
Max. 600 23 12 92 92 ± 20 180 100 42 -55 to + 150
300 (0.063 in. (1.6mm from case ) ...