IRG4PC60FPBF

PD - 95566A IRG4PC60FPbF INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency. • Industry standard TO-247AC package. • Lead-Free C G E n-channel VCES = 600V VCE(on) typ. = 1.50V @VGE = 15V, IC = 60A Benefits • Generation 4 IGBT's offer highest efficiency available • IGBT's optimized for specified application conditions • Designed for best performance when used with IR Hexfred & IR Fred companion diodes. Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy ƒ Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Thermal Resistance RθJC RθCS RθJA Wt Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight www.irf.com TO-247AC Max. 600 90 60 360 360 ± 20 200 520 210 -55 to + 150 300 (0.063 in. (1.6mm from case ) 10 lbf•in (1.1N•m) Units V A V mJ W °C Typ. ––– 0.24 ––– 6 (0.21) Max. 0.24 ––– 40 ––– Units °C/W...